DN2530 Search Results

DN2530

Contextual Info: DN2530 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) DN2530 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

n5 sot-89

Abstract: CH06F
Contextual Info: CH06F VGS off IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max (Ω) min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

p023 diode

Contextual Info: DN2530 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d sx/ ^DS ON Id s s B^ dgx (max) (min) TO-92 TO-243AA* DIE 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SOT-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

DN2530N8-G

Abstract: DN2530 DN2530N3 DN2530N3-G DN2530N8
Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

DN5TW

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

DN2530

Abstract: siemens N3 relay 125OC DN2530N3-G DN2530N8-G DN5TW
Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

nchannel

Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
Contextual Info: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ

74w datasheet

Abstract: DN2530 DN2530N3 DN2530N8 DN2530ND
Contextual Info: DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 300V 12Ω 200mA DN2530N3 DN2530N8 DN2530ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

constant current source with 500mA

Abstract: DN2530 DN2530N3 DN2530N8 DN2530ND P024 p023 diode
Contextual Info: DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* DIE 300V 12Ω 200mA DN2530N3 DN2530N8 DN2530ND Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

Contextual Info: Supertex inc. DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information b v d sx/ R d S ON Order Number / Package Idss b v dgx (max) (min) TO-92 TO-243AA* Die 300V 12£2 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Contextual Info: Supertex inc. DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: S u p e r te x in c . DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on Order Number / Package BVosx/ R ds <o n > I dss BVdgx max (min) TO-92 TO-243AA* Die 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND ' Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

DN2450

Abstract: K4 SOT-89 DN2470 sot-89 dual diode DN2530 DN2535 DN2540 DN2625 DN3135 DN3145
Contextual Info: Selector Guide Depletion Mode MOSFETs BVDSX min RDS ON max (V) (Ω) DN1509 90 DN2450 Device VGS(OFF) IDSS @ VGS = 0V min max min max (V) (V) (mA) (mA) 6.0 - 1.8 - 3.5 300 - 500 10 -1.5 -3.5 700 - DN2470 700 42 - 1.5 - 3.5 500 (typ) - DN2530 300 12 - 1.0 - 3.5

DN2530

Contextual Info: Supertex inc. DN2530 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) DN2530 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

Contextual Info: UCC2961, UCC3961 ADVANCED PRIMARYĆSIDE STARTUP CONTROLLER ą SLUS431A – MAY 2000 – REVISED DECEMBER 2000 D Operates with Secondary–Side PWM D D D D D Multi-Mode Overcurrent Protection with Control Isolated PWM Command through a Pulse Transformer Initial Free-Running Soft-Startup with

UCC2960

Abstract: UCC2961 UCC2961D UCC2961N UCC3960 UCC3961 UCC3961D UCC3961N Cooper CTX01
Contextual Info: UCC2961, UCC3961 ADVANCED PRIMARYĆSIDE STARTUP CONTROLLER ą SLUS431A – MAY 2000 – REVISED DECEMBER 2000 D Operates with Secondary–Side PWM D D D D D Multi-Mode Overcurrent Protection with Control Isolated PWM Command through a Pulse Transformer Initial Free-Running Soft-Startup with

Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

3RT4

Abstract: OVS-12 PA0115
Contextual Info: UCC2961, UCC3961 ADVANCED PRIMARYĆSIDE STARTUP CONTROLLER ą SLUS431A – MAY 2000 – REVISED DECEMBER 2000 D Operates with Secondary–Side PWM D D D D D Multi-Mode Overcurrent Protection with Control Isolated PWM Command through a Pulse Transformer Initial Free-Running Soft-Startup with

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is