VF21 Search Results

VF21

Abstract: VF21/VF31
Contextual Info: VF21 VF31 Die Specifications VF21 / VF31 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF21/VF31 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 9 ± 1.5

VF21

Abstract: bond wire Ag
Contextual Info: VF21 Die Specifications VF21 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF21 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 9 ± 1.5 Au Al-Si 6 x 5.5

SW7 357

Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Contextual Info: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46

VN10K

Abstract: VN0106N3 VN10KN3-G sivn
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

n5 sot-89

Abstract: CH06F
Contextual Info: CH06F VGS off IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max (Ω) min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5

Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

SAF7730HV

Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
Contextual Info: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

sot-23 GFs

Abstract: TP0610T
Contextual Info: Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

FS7-16

Abstract: vf246 VF1000
Contextual Info: PART NUMBERS C R Y S T A L S VFC CRYSTAL STANDARD PART NUMBERS " •, p a ge 16 p a ge 17 C l pF VM 6PN VM 6S PN 0 .0 3 2 7 6 8 12 NC38 NA NA NA 1 13 VF100 VFS100 VFSM 100 VFSM C100 1 .8 4 3 2 VF184 VFS184 VFSM 184 VFSM C 1 84 1 .8 4 3 2 13 VF184A VFS184A

VF21

Contextual Info: DN3125 DN3125 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 250V 20Ω 200mA Order Number / Package Die* DN3125NW * Die in wafer form. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors

Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure

M51271

Abstract: M51272
Contextual Info: M ITSU BISH I ICs A V C O M M O N M51272P/FP i NTSC/PAL ENCODER DESCRIPTION PIN CONFIGURATION TheM51272P/FP is a semiconductor integrated circuit designed for color signal modulation. It consists of R-Y and B-Y input signal clamp circuits,burst signal mixing,chroma modulator,

V12T

Contextual Info: MITSUBISHI ICs AV COMMON M51272P/FP NTSC/PAL ENCODER DESCRIPTION TheM 51272P /FP is a sem iconductor integrated circuit designed PIN CONFIGURATION (TOP VIEW) for color signal modulation. It consists of R-Y and B-Y input I T I R-Y C O LO U R i i J DIFFERENCE IN PUT

2N6661

Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

vf17

Abstract: VF22 sdr100s20 VF10 VF11 VF12
Contextual Info: SDR100S20 thru Solid State Devices, Inc. SDR100S50 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 100 Amp STANDARD RECOVERY HIGH POWER RECTIFIER Part Number/Ordering Information 1/

jrm a43

Abstract: M51271 vf17 X 25 UMI
Contextual Info: MITSUBISHI ICs AV COMMON M51272P/FP NTSC/PAL ENCODER DESCRIPTION TheM51272P/FP is a semiconductor integrated circuit designed for color signal modulation. It consists of R-Y and B-Y input signal clamp circuits,burst signal mixing,chroma modulator, Y/C mixing amplifier,sync adder and video signal output

tda8841 s1

Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
Contextual Info: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'

Contextual Info: SDR100S20 thru Solid State Devices, Inc. SDR100S50 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 100 Amp STANDARD RECOVERY HIGH POWER RECTIFIER Part Number/Ordering Information 1/

125OC

Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and

VF22

Abstract: vf17 VF11 VF12 VF13 VF21 ir3251
Contextual Info: SDR75U20 thru Solid State Devices, Inc. SDR75U50 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 75 Amp ULTRAFAST RECOVERY HIGH POWER RECTIFIER Part Number/Ordering Information 1/

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

diode sot-23 marking AG

Abstract: VF01 sot-23 Marking N2
Contextual Info: TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T❋ 300V 25Ω 2.4V TN2130K1 where ❋ = 2-week alpha date code