TN5335 Search Results
TN5335 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TN5335 | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 451.8KB | 2 | ||
| TN5335K1 | Supertex | N-Channel Enhancement-Mode Vertical DMOS FET | Original | 451.79KB | 2 | ||
| TN5335K1-G | Supertex | Transistor Mosfet N-CH 350V 0.11A 3 pin SOT-23 | Original | 449.33KB | 2 | ||
| TN5335N8 | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 451.8KB | 2 | ||
| TN5335N8-G | Supertex | Transistor Mosfet N-CH 350V 0.23A 3SOT-89 | Original | 449.33KB | 2 | ||
| TN5335NW | Supertex | N-Channel Enhancement-Mode Vertical DMOS FETs | Original | 451.8KB | 2 | ||
| TN5335NW-G | Supertex | Transistor Mosfet N-CH 350V WAFER | Original | 449.33KB | 2 |
TN5335 Price and Stock
Microchip Technology Inc TN5335N8-GTrans MOSFET N-CH Si 350V 0.23A 4-Pin(3+Tab) SOT-89 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TN5335N8-G | 897 | 65 |
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TN5335N8-G | Tape & Reel | 16 Weeks | 2,000 |
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TN5335N8-G | Tape & Reel | 2,000 |
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TN5335N8-G | Bulk | 18 Weeks | 2,000 |
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TN5335N8-G | Tape & Reel | 14 Weeks |
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TN5335N8-G |
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TN5335N8-G | 22 Weeks | 2,000 |
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TN5335N8-G | 21 Weeks | 2,000 |
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TN5335N8-G |
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Microchip Technology Inc TN5335K1-G- Tape and Reel (Alt: TN5335K1-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TN5335K1-G | Tape & Reel | 13 Weeks | 3,000 |
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TN5335K1-G | Tape & Reel | 3,000 |
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| TN5335K1-G | Tape & Reel | 100 |
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| TN5335K1-G | Cut Tape | 1 |
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TN5335K1-G | Bulk | 18 Weeks | 3,000 |
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TN5335K1-G | Tape & Reel | 10 Weeks |
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TN5335K1-G |
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TN5335K1-G | 8 |
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TN5335K1-G | 14 Weeks | 3,000 |
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TN5335K1-G | 13 Weeks | 3,000 |
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TN5335K1-G |
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Microchip Technology Inc TN5335K1-GV01MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 15 Ohm, SOT-23, Projected EOL: 2046-02-11 - Contact for Pricing |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TN5335K1-GV01 | Tape & Reel |
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Get Quote | |||||||
TN5335 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TN5335Contextual Info: TN5335 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TN5335 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain |
Original |
tn5335a020309 | |
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Contextual Info: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices |
Original |
tn5335dsfp-tn5335a080712 | |
marking N8 sot-23Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
tn5335dsfp-tn5335a050108marking n8 sot-23 | |
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Contextual Info: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown |
Original |
tn5335dsfp-tn5335b081213 | |
TN5335Contextual Info: Supertex inc. TN5335 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TN5335 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
tn5335a031610 | |
sot-89 MARKING CODE ab
Abstract: FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel
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Original |
tn5335dsfp-tn5335a091408sot-89 marking code ab+6 | |
TN5335
Abstract: TN5335K1 TN5335N8 TN5335NW
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Original |
tn5335o-236abo-243aa750ma+5 | |
TN5335
Abstract: TN5335K1 TN5335N8 TN5335NW
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Original |
tn5335o-236abo-243aa750ma+5 | |
marking N8 sot-23
Abstract: mos fet marking k1
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Original |
tn5335o-236o-243aaot-89+5 | |
TN5335K1-G
Abstract: A0807
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Original |
tn5335dsfp-tn5335a080712tn5335k1-g+1 | |
Backlight Drivers
Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
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OCR Scan |
hv300/hv310hv301/hv311hv302/hv312hv100/hv101+14 | |
TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
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Original |
2n6659vn2210n2tn0104n32n7007+16 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
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Original |
2n7000-g2n7002-gdn1509n8-gdn2470k4-g+16 | |
TN2524
Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
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Original |
2n66602n66612n70002n7002+8 | |
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pj 72 diode
Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
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OCR Scan |
vp1550vp2106vp2110vp2206+13 | |
DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
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Original |
2n70002n70022n7008dn2470k4+15 | |
N2 SOT-23
Abstract: wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K
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Original |
2n66602n66612n70002n7002+15 | |
HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
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Original |
product25hv99612n7002 marking 1702hv9963+7 | |
diode sot-23 marking AG
Abstract: VF01 sot-23 Marking N2
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Original |
tn2130o-236abtn2130k1ot-23+8 | |
STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
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Original |
str 6656hv509str 6655pj 899 diode+6 | |
ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
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Original |
ic str wg 252hv9961hv9931hv9910b+6 | |
HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
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Original |
2n66592n7007an0332cgap0332cg+16 | |
2n6661 bondingContextual Info: TN2435 TN2435 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-243AA* Die* 350V 6.0Ω 1.0A TN2435N8 TN2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels. |
Original |
tn2435o-243aatn2435n8tn2435nw+6 | |
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Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available. |
Original |
tn2640tn2640lgtn2640n3tn2640nd+3 | |