TN2124 Search Results

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

TN2124

Contextual Info: TN2124 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2124 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

marking N1c sot-23

Contextual Info: TN2124 TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package 240V 15Ω 2.0V TN2124K1 Product marking for SOT-23: TO-236AB* N1C where ∗ ∗ = 2-week alpha date code

Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

marking N1c sot-23

Abstract: TN2124 TN2124K1 TN2124N8 N1C SOT-23 mos SOT-23 diode N1C
Contextual Info: TN2124 TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-243AA* TO-236AB* N1C❋ 240V 15Ω 2.0V TN2124N8 TN2124K1 where ❋ = 2-week alpha date code

TP0610T

Abstract: VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
Contextual Info: ^ S u p ertex ine. SOT-23 MOSFET Products Industry Part Number Polarity b v dss ^GStth V min) V (max) R dS(ON) ^DS(ON) Il (max) VGS (V) lD (mA) il (max) Ve s (V) C|SS C0ss ID (mA) PF PF Supertex Part Number TN2124K1 2N7001 N 240 2.5 85 10 50 45 4.5 20 30

N5015

Contextual Info: TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) BVdgs (max) (max) TO-236AB* Die 24 0V 10Q 1.8V TN2124K1 T N 21 24 N D P rod uct m arking fo r SOT-23: N1C* w h e re 0 2 -w e e k a lp h a da te code

TN2124

Abstract: TN2124K1
Contextual Info: TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1C❋ 240V 15Ω 2.0V TN2124K1 where ❋ = 2-week alpha date code

marking N1C

Abstract: mos n-channel SOT-23 TN2124 TN2124K1 marking N1c sot-23
Contextual Info: TN2124 TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1C❋ 240V 15Ω 2.0V TN2124K1 where ❋ = 2-week alpha date code

SOT-23 Marking code MU

Abstract: F 5 Ld SOT-23
Contextual Info: TN2124 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVdss / R d s <o n V GS lh) b v dgs (max) (max) TO-236AB* Die N IC * 240V 15a 2.0V TN2124K1 TN2124ND

Contextual Info: TN2124 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / R d S O N Order Number / Package ^ G S ( th ) b v dgs (max) (max) TO-236AB* 240V 15& 2.0V TN2124K1 Product marking for SOT-23: N 1C * where % = 2-week alpha date code

marking N1C

Abstract: mos n-channel SOT-23 TN2124 TN2124K1 N1CP
Contextual Info: TN2124 TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Die N1C❋ 240V 10Ω 1.8V TN2124K1 TN2124ND where ❋ = 2-week alpha date code

TN2124

Abstract: TN2124K1
Contextual Info: TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Die N1C❋ 240V 15Ω 2.0V TN2124K1 TN2124ND where ❋ = 2-week alpha date code

TN2124

Contextual Info: Supertex inc. TN2124 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2124 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

sot-23 MARKING CODE GS 5

Contextual Info: TN2124 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package Product marking for SOT-23: BVdss/ ^DS O N ^ G S (th ) BV dgs (max) (max) SOT-23 N 1C* 240V 8£2 1.8V TN2124K1 where * = 2-week alpha date code

mos n-channel SOT-23

Abstract: Marking code AB SOT-23 Diode TN2124 TN2124K1-G sot-23 body marking AC JC MARKING SOT-23 sot23 06 mos fet marking k1
Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

mos fet marking k1

Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

125OC

Abstract: TN2124 TN2124K1-G
Contextual Info: TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is