LN1E Search Results

transistor marking code 12W 12

Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

mosfet K 2865

Abstract: BF1107 ic sc 6200 passive loopthrough
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

gi 9644 diode

Abstract: INTELDX4 write-through
Contextual Info: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit

Contextual Info: Intel Xeon® Processor E5 Product Family Datasheet- Volume Two May 2012 Reference Number: 326509-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

CHN 749 datasheet

Contextual Info: Intel Core i7 Processor Family for LGA2011 Socket Datasheet – Volume 2 of 2 Supporting Desktop Intel® Core™ i7-4960X Extreme Edition Processor Series for the LGA2011 Socket Supporting Desktop Intel® Core™ i7-49xx and i7-48xx Processor Series for the LGA2011 Socket

UniPHY

Abstract: vm 30 cpu Sandy Bridge xeon e5-2400 intel xeon e5-2400 PBAR23SZ Xeon e5 2600 v2 4H11 intel Sandy Bridge intel I5-750
Contextual Info: Intel Xeon® Processor E51600/2400/2600/4600 E5-Product Family Product Families Datasheet- Volume Two May 2012 Reference Number: 326509-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

dual-gate

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

A8044

Contextual Info: IN TE G R A TE D CIRCUITS EM TA S&flEET TDA8044; TDA8044A Satellite demodulator and decoder O bjective specification File under Integrated C ircuits, IC02 Philips Semiconductors 1998 A pr 07 PHILIPS PHILIPS Philips S e m ico nd uctors Objective specification

diode AR S1 99

Abstract: diode AR s1 56
Contextual Info: DISC RETE S E M IC O N D U C TO R S InlEET PHN405 4 N-channel 60 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

AR1310

Abstract: D702M LN1E
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD702MI CATV amplifier module 1998 Mar 13 Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

intel 8288

Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
Contextual Info: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or

ic tda7057aq

Contextual Info: IN T E G R A T E D CIRCUITS [nlEET TDA7057AQ 2 x 8 W stereo BTL audio output amplifier with DC volume control Product specification Supersedes data of 1997 July 15 File under Integrated Circuits, IC01 Philips Sem iconductors 1998 Apr 07 PHILIPS PHILIPS Philips S e m ico nd uctors

lm 9805

Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733
Contextual Info: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s

transistor marking code 12W SOT-23

Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

LN1EE

Abstract: MIC58P01BWM
Contextual Info: MIC58P01 L 8-Bit Parallel-Input Protected Latched Driver General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor

transistor marking code 12W SOT-23

Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

MC68121

Abstract: MC68120 mc6809 MC2708 68120/M
Contextual Info: MC68120 MC68121 MOTOROLA A d v a n c e In fo rm a tio n HMOS {H IG H -D E N S 1 T Y N -C H A N N E L IN TE L LIG E N T PER IPH ER A L CON TR OLLER The M C 68120/M C 68121 Inte llig e n t Peripheral C o n tro lle r MPC I is a general purpose , m ask p rogram m ab le peripheral c o n tro lle r. The IPC

Contextual Info: Intel Core i7 Processor Family for the LGA-2011 Socket Datasheet, Volume 2 Supporting Desktop Intel® Core™ i7-3960X Extreme Edition Processor for the LGA-2011 Socket Supporting Desktop Intel® Core™ i7-3000K and i7-3000 Processor Series for the LGA-2011 Socket