2N672 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6727 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

2N6727

Abstract: MPS6727 PN6727
Contextual Info: NATL SEMICOND DISCRETE H E D I bSO llBO 0DB7c!bii ä I ro Z 25 VO M T- 33-/7 National Semiconductor O IO M s 2N6727 PN6727 "O CO 0> MPS6727 IO M PNP General Purpose Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter Min

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6728 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

NSDU45

Abstract: D40C5 B0517 NSD154 D40K1 T0-202 marking WM npn darlington transistor 150 watts NSD-U45 MPSa13 451
Contextual Info: 40 Devices ; “ i f s'il : Darlington Transistors continued NPN h FE •c PNP 2N6724 ]> Max (Amps) Min 1 25,000 b50113D 003^534 ^CE(sat)® *C * •b lc Max 15,000 451 H P 0 (Amb) (MHz) mA (Volts) Max mA »«A Min 200 1.0 200 2mA 100 500 1.5 1A MNSCS

2N6717

Abstract: 2N6728 2N6716 92GU05 92GU06 T060
Contextual Info: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6727 TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6727 TRANSISTOR（ PNP ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V BR CBO : -50

Contextual Info: 2N6727 Plastic-Encapsulate Transistors 2 PNP TO-92 Features Power dissipation PCM : 1 W Tamb=25℃ Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. BASE 3. COLLECTOR

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2n6726

Abstract: 2n6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage

2N6727

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N6727 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25℃) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range

Contextual Info: Not Recommended for New Design Please Use ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

nsdu57

Abstract: TO-237 2N6556 2N5415
Contextual Info: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11

2N6726

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIALTRANSISTOR 2N6726 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector -Base Voltage

2N6727

Abstract: TRANSISTOR 2N6727 Equivalent of 2n6727
Contextual Info: 2N6727 2N6727 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 2. BASE W(Tamb=25℃) 3. COLLECTOR Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIALTRANSISTOR 2N6726 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC

2N6729

Abstract: TO-226A MPS6729
Contextual Info: 2N6729/MPS6729 NATL SEMICOND DISCRETE 11E: D | tSG113D DDHTEbt. T T :33-/7" National JlA Semiconductor jg n MPS6729 2N6729 TO-2 3 7 Ul m TO- 2 2 6 « T L / G /1 0 1 0 0 - 8 T L / G /1 0 1 0 0 - 4 PNP General Purpose Amplifier Electrical Characteristics ta

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2N6724

Abstract: 2N6725
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO

2n6724

Abstract: 92GU45A 2N6725 92GU45
Contextual Info: 92GU45,45A 2N6724.25 NPH POWER DARUNGTON TRANSISTORS 40-50 VOLTS 2 AMPS, 1 WATTS NPN Features: COLLECTOR • Lamp driver • Digit driver • Directly compatible with bipolar and MOS l/C drive CASE STYLE T O -237 DIMENSIONS ARE IN INCHES AND MILLIMETERS

2n6728

Abstract: 2N6730 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSA00189167.
Contextual Info: Not Recommended for New Design Please Use ZTX553 / ZTX753 2N6728 2N6729 2N6730 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

2N6724

Contextual Info: 2N6724 2N6725 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * 50 Volt V CE0 * Gain of 15k at lc = 0.5 A m p * Ptot=1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.