2N6132 Search Results

2N6132

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

2N6129

Abstract: 2N6131 2N6132 2N6133 2N6134 2N6130
Contextual Info: Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications

2N6133

Abstract: 2N6132 2N6134 2N612 2N6129 2N6131 2n6134 datasheet 2N6130
Contextual Info: Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications

2N6132

Contextual Info: 2N6132 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 220AB DIMENSIONS mm min min max A 10 10.4 0.393 0.409 0.626 B 15.2 15.9 0.598 C 12.7 13 7 0.500 0.539 6.2 6.6

2N6130

Abstract: 2N6131 2N6129 2N6132 2N6133 2N6134
Contextual Info: SavantIC Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications

2N6133

Abstract: 2N6132 2N6129 2N6130 2N6131 2N6134
Contextual Info: SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications

2N6132

Abstract: 2N6134 2N6133 2N6129 2N6131 2n6134 datasheet 2N6130
Contextual Info: Product Specification www.jmnic.com 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications

Contextual Info: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C

2N6131

Abstract: 2N6129 2N6130 2N6132 2N6133 2N6134
Contextual Info: Product Specification www.jmnic.com 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

2n6125

Contextual Info: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

LM340T5 7805

Abstract: LM340T5 7805 P 7805 sot223 7805 sot-223 LM340T5 lm340t12 7812 p LM340T12 7812 7805 p LM340T5 7805P n00a
Contextual Info: LM340-N www.ti.com SNOSBT0H – MAY 2004 – REVISED JULY 2006 LM340/LM78XX Series 3-Terminal Positive Regulators Check for Samples: LM340-N FEATURES 1 • • 2 • Complete specifications at 1A load Output voltage tolerances of ±2% at Tj = 25°C and ±4% over the temperature range LM340A

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.