2N403 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N4033

Abstract: transistor 2N4033 2N4030 2N4031 2N4032 2N4030-2N4031
Contextual Info: 2N4Ö3Ö to 2N4033 J PHILIPS INTERNATIONAL 5bE D • 7110 0S b V 00M2b5b 73b Ml PHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in T O -39 metal envelopes primarily intended fo r large signal, low-noise, low-power audio frequency applications fo r industrial service.

bc856 to 92

Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Contextual Info: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ

transistor 2N4033

Abstract: 2n4033 datasheet 2N4033
Contextual Info: 2N4033 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. c u d TO-39 e t le s t o r P INTERNAL SCHEMATIC DIAGRAM

2N4033 equivalent

Abstract: motorola 2n4033 transistor 2N4033 2N4032 2N4033 1N916 2n4032-2n4033
Contextual Info: MOTOROLA Order this document by 2N4032/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors LAST SHIP 21/03/00 2N4032 2N4033 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol 2N4032 2N4033 Unit Collector – Emitter Voltage VCEO – 60 – 80

N706A

Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
Contextual Info: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N4033

Abstract: transistor 2N4033 2N4030 2N3020 2N4032 2N3019 2N3107 2N3108 2N4031 pnp for 2n3019
Contextual Info: 2N4030 2N4033 through PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES iS K 4 •* I CASE TO-39 THE 2N4030 THROUGH 2N4033 ARE PÏÏP SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICA­ TIONS UP TO 1 AMPERE. THE 2N4030, 2H4031, 2N4032,

2n4036

Abstract: MOTOROLA TO205AD 2N4037
Contextual Info: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N4036 2N4037 COLLECTOR 3 BASE MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage Rating VCEO -6 5 -4 0 Vdc Collector-Base Voltage

Contextual Info: ZPiodueti, <J TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and

BUY80

Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
Contextual Info: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

2N4029

Abstract: 2N4033 Semicoa 2N4033 transistor 2N4033
Contextual Info: Data Sheet No. 2C4029 Generic Packaged Parts: Chip Type 2C4029 Geometry 6700 Polarity PNP 2N4029, 2N4033 30 MILS B E 30 MILS Chip type 2C4029 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4029, 2N4033 Product Summary:

Contextual Info: 2N4030 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

05V1

Contextual Info: 2N4033 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCH 8.89 (0.35) 9.40 (0.37) 7.75 (0. 305) 8.51 (0. 335) 5.08 (0. 200) typ. 4.19 (0. 165) 4.95 (0. 195) 12.70 (0.500) min. 2. 54 (0.100) 2 1 0. 89 m a x . (0. 035) 0.41 (0.016) 0.53 (0.021)

2N4036

Abstract: 2N4314 2N4037 and/tp 4036
Contextual Info: E SOLID OÏ S TATE D eT | 3 fl 7 S 0 f l l 0017115 H |~ V - 2 7 - 2 / _ H ig h-S p eed Pow er Transistors File Number 2N4036, 2N4037, 2N4314 216 Medium-Power Silicon P-N-P Planar Transistors TER M IN AL DESIGNATIONS General-Purpose Types for Industrial and

2N40

Contextual Info: M AXIM UM RATINGS Symbol 2N4036 2N4037 Unit C o lle c to r - E m itte r V o lta g e Rating v CEO -6 5 -4 0 Vdc C o lle c t o r - B a s e V o lta g e v CBO E m it t e r - B a s e V o lta g e vebo B a s e C u rre n t -9 0 -6 0 Vdc - 7 .0 - 7 .0 Vdc Iß - 0 .5

2N4029

Contextual Info: 2N4029, 2N4033 Product Preview Small Signal Switching Transistor PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage

2N4033

Contextual Info: 2N4033 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCH 8.89 (0.35) 9.40 (0.37) 7.75 (0. 305) 8.51 (0. 335) 5.08 (0. 200) typ. 4.19 (0. 165) 4.95 (0. 195) 12.70 (0.500) min. 2. 54 (0.100) 2 1 0. 89 m a x . (0. 035) 7.75 (0. 305) 8.51 (0. 335)

ksd113

Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100

2N4036

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR 2N4036 TO-39 General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION