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2N357 Datasheets (165)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N357	Germanium Power Devices	Germanium NPN Transistors	Scan	PDF	57.83KB	1
2N357	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	71.82KB	1
2N357	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	97.88KB	1
2N357	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	106.46KB	1
2N357	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.8KB	1
2N357	Unknown	Vintage Transistor Datasheets	Scan	PDF	48.63KB	1
2N357	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	35.33KB	1
2N357	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.26KB	1
2N357	Unknown	GE Transistor Specifications	Scan	PDF	37.54KB	1
2N357	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	152.78KB	1
2N357	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	136.16KB	1
2N357	RCA	RCA Transistor and Diode Data	Scan	PDF	43.22KB	1
2N3570	Advanced Semiconductor	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF	15.67KB	1
2N3570	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	42.35KB	1

2N3570	Ferranti Semiconductors	Shortform Data Book 1971	Short Form	PDF	81.15KB	1
2N3570	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF	29.96KB	1
2N3570	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	82.05KB	1
2N3570	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	107.24KB	1
2N3570	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.53KB	1
2N3570	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF	51.38KB	1

...

2N357 Price and Stock

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Vishay Intertechnologies RMK22N357RF - Waffle Pack (Alt: RMK22N357RF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RMK22N357RF	Waffle Pack		15 Weeks	100	1 - 10 - 100 $18.73 1000 $16.39 10000 $15.64	Buy Now
Newark	RMK22N357RF	Bulk			100	1 - 10 - 100 $18.73 1000 $16.72 10000 $16.04	Buy Now
Susumu Co Ltd RG2012N-3571-D-T5 Thin Film Resistors - SMD 1/8W 3.57K Ohms 0.5% 0805 10ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RG2012N-3571-D-T5					1 $0.38 10 $0.28 100 $0.20 1000 $0.13 10000 $0.10	Get Quote
Susumu Co Ltd RG2012N-3572-D-T5 Thin Film Resistors - SMD 1/8W 35.7K Ohms 0.5% 0805 10ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RG2012N-3572-D-T5					1 $0.38 10 $0.28 100 $0.20 1000 $0.13 10000 $0.10	Get Quote
Susumu Co Ltd RG2012N-3570-D-T5 Thin Film Resistors - SMD 1/8W 357 Ohms 0.5% 0805 10ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RG2012N-3570-D-T5					1 $0.38 10 $0.28 100 $0.20 1000 $0.13 10000 $0.10	Get Quote
Susumu Co Ltd RG2012N-3573-D-T5 Thin Film Resistors - SMD 1/8W 357K Ohms 0.5% 0805 10ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RG2012N-3573-D-T5					1 $0.39 10 $0.28 100 $0.20 1000 $0.14 10000 $0.12	Get Quote

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2N357 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF178 Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +132n918 2n4252 2n4253 bfq36 bf257/8/9 bfq37 bf178 bf179 bft79 bf177 2n2219 2n2905 bf338 bc325	PDF
F13S Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +142n918 2n4252 2n4253 high59 bs9365 f13s bfq35 bc177 pnp transistor transistor bc303 transistor t05 bf179 2n3440 equivalent bc304 equivalent bc143 equivalent	PDF
C495 transistor Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +142n918 2n4252 2n4253 bs9300 2n2219a c495 transistor c735 2n1893 equivalent c644 c735 o 2n2222 hfe c749 transistor c633 npn c460	PDF
Contextual Info: 2N3578 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2n3578	PDF
Contextual Info: 2N3577 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n3577 freq10m	PDF
Contextual Info: 2N3574 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)18m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)600p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2n3574	PDF
C736 Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +152n918 2n4252 2n4253 bs9300 2n2219a c736 c495 transistor bc303 equivalent 2n2222a 026 c735 bc143 equivalent bc143 c644 equivalent transistor 2n1711 transistor c633	PDF
2SA1283D Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77 Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index	Original	bc303-6 2n3579 kt214gl bcw89 +6bcw89r 2sa1283d bcw56a motorola 2n3809 low-power silicon pnp to77	PDF
Contextual Info: 2N3570 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2n3570	PDF
Contextual Info: 2N3576 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01ux @V(CBO) (V) (Test Condition)	Original	2n3576 freq400m	PDF
2N290 Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018 Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +92n918 2n4252 2n4253 high59 bs9365 2n290 bc143 bft79 t018	PDF
2n3571 Abstract: 2N3570 2N3572 Contextual Info: TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: • Low Noise Figure . . . 7 dB Max at 1 GHz	OCR Scan	2n3570 2n3571 2n3572	PDF
2N372A Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506 Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665	OCR Scan	2n3501 2n3506 2n3507 2n3508 +13l/10m 2n3509 2n3511 15min 2n3571 2n372a 2n3680 2n3809 t072 2n2979dcsm 2n3734 bfx81 t052	PDF
Contextual Info: 2N357 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 2N357 Availability Online Store Diodes	Original	2n357 stv3208 lm3909n	PDF

BEL187 Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2	Original	2sb1296 2sb1295 bfx12 bfx13 +10kt361 2sb1118s 2sb808 2sb1118e bel187 na22xx bc262a low-power silicon pnp 2sa523 na22xh	PDF
Contextual Info: 2N3573 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)6.0m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)600p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2n3573	PDF
2N4252 Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95j0 2n3570 2n3571 2n3572 +112n918 2n4252 2n4253 high15 -150ns 240ns pnp hfe 70 bft69 048j 2n3571 npn bc143	PDF
2n3576 Abstract: kc 140 Contextual Info: T Y P E 2N3576 P-N-P S ILIC O N TR A N S IS TO R B U L L E T I N NO. DL-S 6 4 5 9 1 6 , A U G U S T 1 9 6 4 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Low Guaranteed VCE sat — 0.5 v max at 100 ma • High fT — 400 Me min at 10 v, 10 ma • Low Total Switching Time — 80 nsec max at 10 ma	OCR Scan	2n3576 kc 140	PDF
2N3571 Abstract: MA42141 2N5054 2n5053 2N5651 Contextual Info: Silicon Low Noise Bipola Transistors MODEL NUMBER PAGE 2N 2857 2N 3570 2N3571 11-3 11-3 11-3 2N 3572 2N 3683 11-3 11-3 11-3 2N 3839 2N 38 80 . 2N 3953 2N5031 2N 5032 2N5053 2N5054 2N 51 79 2N5651 2N 5662 11-3 11-3 .11-3 11-3 11-3 11-3	OCR Scan	2n3571 2n5031 2n5053 2n5054 +72n5651 2n6618 ma42001 a42003 a42004 ma42005 ma42141	PDF
Contextual Info: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20	OCR Scan	2n356a 2n357 2n357a 2n358 +52n358a 2n366 2n377 2n377a 2n385	PDF
2n3570 Abstract: Transistor D 798 Contextual Info: 2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 C TJ -65 C to +200 C	Original	2n3570 transistor d 798	PDF
2N3511 Contextual Info: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583	OCR Scan	b133167 20min 15min 30min +560min 300typ 150typ 600typ 2n3511	PDF
Contextual Info: 2N3572 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2n3572	PDF
Contextual Info: 2N3571 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2n3571	PDF

2N357 Search Results

2N357 Datasheets (165)

2N357 Price and Stock

Vishay Intertechnologies RMK22N357RF

Susumu Co Ltd RG2012N-3571-D-T5

Susumu Co Ltd RG2012N-3572-D-T5

Susumu Co Ltd RG2012N-3570-D-T5

Susumu Co Ltd RG2012N-3573-D-T5

2N357 Datasheets Context Search

BF178

F13S

C495 transistor

C736

2SA1283D

2N290

2n3571

2N372A

BEL187

2N4252

2n3576

2N3571

2n3570

2N3511