2SK952
Contextual Info: 2SK952 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters
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2sk952o-220absc-46 |
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CFL UPS 45 W
Abstract: mosfet 2sk 8cfl 2SK952 T151 diode A249
Contextual Info: 2SK952 FUJI POWER MOS-FET N-CIIANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • Hicih speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hieih voltage • V G<S= ± 30V Guarantee ■Applications • Switching regulators
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2sk952tq-220absc-46tc-25+5cfl ups 45 wmosfet 2sk8cflt151diode a249
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2SK952
Abstract: T151 ltaef
Contextual Info: 2SK952 FUJI POWER M OS-FET N-CIIANNEL SILICON POWER MOS-FET F -II SERIES lOutline Drawings • Features • Hicih speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hieih voltage • V G<S = ± 3 0 V Guarantee ■Applications
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2sk952tq-220absc-46tc-25+2t151ltaef
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SK952
Abstract: 016y
Contextual Info: 2SK952 FUJI PO W ER M O S-FET N-CIIANNEL SILICON POWER MOS-FET F -II SERIES lOutline Drawings • Features • Hie h speed switching • Low on-resistance 01.6Y • No secondary breakdown I0 t°, N • Low driving power • Hieih voltage f • V c;s = ± 30V Guarantee
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2sk952o-220absc-46sk952+1016y
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2SK952
Contextual Info: 2SK952 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters
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2sk952o-220absc-46 |
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2SK1011
Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+82sk1007-012sk1009-012sk1011-012sk1101-01m2sk10112sk1013-012sk1222-012sk1211
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001ss725-35kg2sk1171900 v 9 amp mosfet+82sk10152sk7262sk15112sk1222j5452sk10182sk92sk151
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2sk1507
Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+102sk1007-012sk1009-012sk1011-012sk1101-01m2sk15072sk1018-012sk10182sk1820-012sk9562sk1013-01
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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t0-220t0-220f152sj472-01l2sj314-01l+162sj473-01l2sk2248-01l2sk1942-012sk2770-012sk2528-012sk1944-012sk1002sk27652sk2029-01ls2sk19362sk19402sk27612sk1962sk20822sk10822sk182
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2SK2696
Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Contextual Info: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack
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o-220abo-220f15feb-002sk2696+132sk9512sk23972sk25272sk25282sk21002sk32642sk28502sk2850 datasheet2sk26482sk2648 transistor2sk26542sk2648 equivalent2sk2647
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1d500a-0301di200e-0551di200k-0551di200m-120+161di200ma-0501di200z-1001di200z-1201di200zn-1201di200zp-1201di300m-0506di15s-0501mb1400n-1206d130z-120enc4712sk28502sk2761esja58-06a1mbh-60d1mbh60d-090a6di15s050
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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001ss7ct03pt-39-132mi50f-050+162mi50s-0502mi100f-0252mi100f-0502mi200f-0256mi15fs-0506mi20fs-0252sk1005t0-220ft0220f2sk10102sk10112sk12172sk11052sk9562sk10842sk1101
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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2sk9052sk9062sk900t0220+92sk947mt0220f152sk9012sk1549t03pf2sk9022sk2079-01m2sk20792sk2001-01m
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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2SK725A
Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
Contextual Info: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899
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2sk9052sk11342sk905a2sk906+132sk906a2sk9002sk9472sk9482sk9012sk9022sk725a2sk9032sk10182sk1010t0220f2sk9562sk953
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2SK2079
Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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2sk9052sk9062sk9002sk947m+82sk9012sk15492sk9022sk949m2sk9502sk7242sk20792sk2079-01m
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2SK1212
Abstract: 2sk904 replacement
Contextual Info: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas
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2sk9052sk9062sk9002sk947mr+82sk9012sk1549r2sk9022sk949mr2sk9502sk7242sk12122sk904 replacement
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2SK2652
Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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f8006nf7007n2sj472-01lt0-220+82sj314-01l2sj473-01l2sj474-01l2sj476-01l2sk2760-01r2sk2148-01r2sk26522sk2771-01r
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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fap-11t03pf2sk957-01t0220f+152sk958-01t02202sk959-012sk1548-012sk1024-0190t03p2sk956100022sk906a2sk1082t0092sk13882sk16612sk900fuji semiconductors
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2SK1511
Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
Contextual Info: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :
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2sk1221-01t02202sk191t0220f15+92sk1007-012sk1009-012sk1011-012sk1101-01m2sk15112sk1512-012sk10182sk1018-012sk1013-01
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2sk3474-012sk3537-01mr2sk3554-012sk3555-01mr+162sk3556-01l2sk3535-012sk3514-012sk3515-01mr2sk3516-01l2sk3517-01f5022f5017hf5021hf5016h2sk35282sk2696f5038h2sk3102-01r2sk2696-01mrf5018
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2SK847
Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247
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2sk696o-2472sk7192sk696a+13o-205ad/to-392n33742n33522sk8472n33052sk7342n2807a2n29702n29682n27092sk7332n29712sk794
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