2SK1334 Search Results

Contextual Info: 2SK1334 Silicon N-Channel MOS FET HITACHI Nov. 1 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter Outline

2SK1334

Abstract: 2SK1334BYTL-E
Contextual Info: 2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 Previous: ADE-208-1271 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter

2SK1334

Abstract: Hitachi DSA00396
Contextual Info: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 3 2 1 4

Contextual Info: 2SK1334 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK

Hitachi DSA002749

Contextual Info: 2SK1334 Silicon N-Channel MOS FET Nov. 1 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK

Hitachi DSA002779

Contextual Info: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 3 2 1 4

I334

Abstract: 2SK1334
Contextual Info: HITACHI 2SK1334 SILIC O N N-CHANNEL MOS F E T HIGH S P E E D P O W E R S W IT C H IN G • FEA T U R ES • Low On-Resistance • High Speed Switching A Low Drive Current • No Secondary Breakdown . 0.44mj>. • Suitable for Switching Regulator and t , Gate

2SK1334

Abstract: DSA003639
Contextual Info: 2SK1334 Silicon N-Channel MOS FET ADE-208-1271 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter

Hitachi DSA00279

Contextual Info: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1334 Absolute Maximum Ratings Ta = 25°C

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sk1299

Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SK1334BYTL-E

Abstract: 2SK1334
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK1334

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2SK1377

Abstract: 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2sk1346 2SK1375 2SK1348 2SK1351
Contextual Info: f m it e m £ H y & tit Ü % K 2SK1333 X % V* V * ft (V) Motor-D, DDC MOS N B 500 DSS ±20 S SW-Reg, DDC MOS N E 200 DSS ±20 BÍL SW-Reg, DDC MOS N E 200 DSS ±20 BÍL Motor/Relay-D MOS N E 60 DSS ±20 2SK1337 BÎL Motor/Relay-D MOS ±20 BÎL SW-Reg, DDC

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid