2SD1745 Search Results

B1326

Abstract: 2SB1175 2SD1745
Contextual Info: Power Transistors 2SB1175 2SB1175 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1745 •Features U n it : mm 3.7max. 7.3max. • Low collector-eim itter saturation voltage Vce<,.o 3.2m ax. £L • Good linearity of DC c u rre n t gain (hFE)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1

2SB1175

Abstract: 2SD1745
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1175

Abstract: 2SD1745
Contextual Info: Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1

p833

Abstract: 2SB1175 2SD1745 panasonic 2SD
Contextual Info: Power Transistors 2SD1745 2SD1745 Silicon NPN Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 1 1 7 5 Unit * mm 3.7m ax. 7.3m ax. • Features 3.2m ax. 0.9±0.1 i • Low co llecto r-em itter saturation voltage VcE<sat>

2SB1175

Abstract: 2SD1745
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit: mm 0˚ to 0.15˚ 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE

OF IC 723

Abstract: 2SB1175 2SD1745
Contextual Info: Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1175 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C

2SB1175

Abstract: 2SD1745
Contextual Info: Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 0˚ to 0.15˚ 2.5±0.2 1.0 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE

2SB1175

Abstract: 2SD1745 function of 723 ic tf 130
Contextual Info: Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1175 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C

Contextual Info: Power Transistors 2SD1745 2SD1745 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB1175 U n it ! mm 3.7 m ax, 7.3max. 3.2max. • Features • Low collector-em itter saturation voltage • High DC c u rre n t gain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 0˚ to 0.15˚ 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1810

Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5

SB-116

Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
Contextual Info: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50