2SB1133
Abstract: 2SD1666
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1666 APPLICATIONS
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SC-62
Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)
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2sd16622sd16632sd16642sd1665am+92sd1665m2sd16662sd16672sd16922sb1150o-126sc-622sd16682sd1669
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ic TO 30313
Contextual Info: Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • • • Package Dimensions Wide ASO Adoption of MBIT process . Micaless package facilitating easy mounting.
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2SB1133
Abstract: 2SD1666 ENN3031A
Contextual Info: I Ordering num ber : ENN3031A} PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • W ide ASO Adoption of M B IT process . • M icaless paekagc facilitating easy mounting.
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enn30312sb11332sd1666o-220ml+1enn3031a
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2Sb1133
Abstract: 2SD1666
Contextual Info: JMnic Product Specification 2SB1133 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1666 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・For low-frequency and general-purpose amplifier applications
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2SB1133
Abstract: 2SD1666
Contextual Info: SavantIC Semiconductor Product Specification 2SB1133 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1666 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose
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Contextual Info: 2SD1666 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2sd1666 |
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ic TO 30313
Abstract: IC 30311 30312 2SD1666 2sb1133
Contextual Info: Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • • • Package Dimensions Wide ASO Adoption of MBIT process . Micaless package facilitating easy mounting.
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enn3031a2sb11332sd1666ic to 30313+2ic 3031130312
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2SD1666
Abstract: 2SD1666 equivalent 2SB1133
Contextual Info: SavantIC Semiconductor Product Specification 2SD1666 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1133 ·High reliability ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose amplifier applications
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2sd1666o-220f2sb11332sd1666 equivalent |
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2SB1133
Abstract: 2SD1666
Contextual Info: Inchange Semiconductor Product Specification 2SB1133 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1666 ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・For low-frequency and general-purpose
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88814
Abstract: 52101 2SD1666 20343
Contextual Info: Ordering number : ENN2034B 2SD1666 NPN Triple Diffused Planar Silicon Transistor 2SD1666 Low-Frequency Power Amplifier Applications Applications • Package Dimensions Low-frequency general-purpose power amplifier application. unit : mm 2041A [2SD1666] Features
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Contextual Info: 2SD1666R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2sd1666r |
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2SC1565
Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207
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2sd11962sd6332sd16342sd2024+141377k2sd10242sd6002sc4952sc1212a2sd9462sc15652sd13922sc34692sd14312sc28242sd13882sd18762sd1499
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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2SD313
Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used
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t0-220mlt0-2202sa14692sc3746+102sa14702sc37472sa14712sc37482sb11342sd16672sd313transistor 2sc37812sd11592sa128
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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t0220mlto-32-0702sa1678fc102+72sc44492sa14162sj1932sk2832sc4106 application notes2sc3383fc124
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SB145
Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used
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t0-220mlt0-2202sa14692sc3746+142sa14702sc37472sa14712sc37482sb11342sd1667sb1452sd1159hc/2sb824 transistor2sb507 sanyo2sd16662sa1282sb824 transistor2sd313
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2SA1622
Abstract: 2SC4639 sanyo 2SD313 marking ANs 2SA1782 2SA1783 2SC4640 2SC4641 T0-126ML
Contextual Info: SA0YO General-Purpose Transistors Sanyo general-purpose transistors are designed to meet every high-performance requirement. They have wide application. They are easy to use because of large current capacity and wide ASO. ate S m a l 1 — s 1 g n a 1 T r a n s i s t o r - s .
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tc-252sa16222sc4211cl2sa178kgs+112sc46392sa17822sc46402sb5072sd313t0-220sanyomarking ans2sa17832sc4641t0-126ml
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1271A
Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513
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2sd12432sd1243a2sd12442sd1245+162sd12462sd12472sd12482sd1248k2sd12512sd12521271anec 12512sb21982sd1227m2sd10702sc40082sd23942sd15932sd18552sd1944
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RT1N241M
Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Contextual Info: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F
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2sd16232sc28732sc3458n221f+16rt1n432cdtc143xkun4216rt1n432sdtc143xsrn1401rt1n241m2sc32462sc41594392dtc143es2sc32962sc3374dtc114eu2sc4368dtc144eu
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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tnd023ffx504cph5504mch5805+16fx505hpa72rtnd024ffx506mch3301tnd024mp2sk34362sa18722sc60932sc49432sa19702sk38502sk1597tt20842sc52672sk3744
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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audio amplifier POWER TRANSISTORS
Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Contextual Info: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)
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2sb632kt01262sd612k2sa1692+122sc38072sc38082sb5112sd3252sb514audio amplifier power transistors2sk669mosfet analog switch500 w power amplifier2sa17632sk1840audio power amplifier
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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