2SD1200 Search Results

Contextual Info: K -7 > v X $ / 7 ransistors 2SD1200 yU =i> h ? > y Z $ i Freq. Power Amp. & Epitaxial Planar NPN Silicon Transistor • W B vH iH I/D im en sion s U n it: mm *e*t 5>o 2) VCEO=80V t M B /± T * 3 „ 3) 2 S B 8 8 9 t = l > 7 ,' U T ' * 5 o • Features 1) The rear surface of this device is

Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278

2SD1659

Abstract: 2SB689F 2sb123b
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)

2SB889

Abstract: 2sd1200
Contextual Info: h 7 > y 7.£ / T ransistors ROHM CO LTD m iE D H 7f l E a m DDDSfl3 a 2 I t f $ ^ y 7 ; U 7 ° U - ^ N P N 2 z m . 2SD1200 • RHN — b ? > y Z $ Freq. Power Amp. 7 ~J3-0^~ Epitaxial Planar NPN Silicon Transistor • i4 - Jf2 \f$ ill/D im e n sio n s U n it: mm

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2sd1200

Abstract: 2SB1309
Contextual Info: h "7 > V X £ / T ransistors 2 S B 1 3 2SB1309 I t°^ ^ r'> 77^ 7 ° U - ^ P N P '> ';= !> h ÿ > y ' z $ fëJS}j£ tl;fri|lllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 9 • 1 Dimensions Unit : mm K T ? a t 3 Î i T * î ‘J , * s' ^ T ' Æ . - â o

Contextual Info: Transistors C P T • T O - 1 2 6 • T O -1 2 6 F P CPT SC-59 is also available as automated, surface mounted type by adding F5 to the part number (see page 77). TO-126FP is a direct mounting type, allowing simple assembly without additional insulator.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2SD1206

Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
Contextual Info: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001

L7605

Abstract: 2SD947F 2sc4137 2SB1423 2sa1775 transistor 2SB1516 2SB1007 2SB1009 2SB1065 2SB1086
Contextual Info: Transistors CPT • T O -1 2 6 • T O -1 2 6 FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number (see page 77) . TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package

2SD1200

Abstract: transistor d 2333 2SB1309 ti25 2SD120 TO-126F TO-126-F
Contextual Info: 40E D ROHM CO LTD • 7020^=] aaOSb2D T HRHH h 7 > V ^ ^ /Transistors 2SB1309 : 2S@13< ““ “ X t ° $ * y 7 J l ' 7 ° l s - - J - B P N P T-33-/7 y V = J > ‘ :ü>Æ^^jiHlf!lffl/Lo w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • w* • ii-J fi^ jiH /'D im e n s io n s Unit : mm

2SD2010

Abstract: 2SD2008 2SD2006 2Sb1333 2SD947 2SB1328 J0801 2SD2005 2SD2004 2SB1330
Contextual Info: ROHM CORP DE 1 7 ñ 2 ñ cm □1 Tr □ □ □ llS 'ì 7 I D 7 “-2 . 9 > _ o / LU 1 • TO-92L Types Í* * New Products ☆ Under Development Type 2SC3269 Function. Chroma Driver • -100 *2SB1256 High Voltage Switching fc A - , • 0.1 pc ( w r 0.75 .ir (MHz')

2SB889

Abstract: 2SD1200F 2SB889F 2SD1200
Contextual Info: h 7 > y ^ ^ /'Transistors 2SB889F 2SB889F X £ e$ * '> T J l '7 ° l s - i- B P N P y ‘J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor ÌÈ ^^JiilS ffl/L o w Freq. Power Amp. 1 Kffifci-JUKT'UfcftTfctJ, *#« • W -Jß '+ jiS /D iinensio n s Unit: mm)