2SB494
Abstract: LEI-4 2SB949 2SB949A 2SD1275 2SD1275A 2SB494A
Contextual Info: Power Transistors 2SB949, 2SB949A 2SB949, 2SB949A Package Dimensions Silicon NPN Epitaxial Planar Darlington Type Power Amplifier, Switching Complementary Pair with 2SD 1275, 2SD 1275A , • Features • High DC c u rre n t gain hFE • High sp eed switching
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2sb9492sb949a2sd12752sd1275a+32sb494lei-42sb494a
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2SB0949
Abstract: 2SB0949A 2SB949 2SB949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SB0949, 2SB0949A 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0949 −60 VCEO 16.7±0.3 V −5 V Peak collector current
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2sb09492sb0949a2sb9492sb949a+4sc-67o-220f2sd12752sd1275a
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2SD1275
Abstract: 2SD1275A 2SB949 2SB949A
Contextual Info: Product Specification www.jmnic.com 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949,2SB949A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification
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2sd12752sd1275ao-220fa2sb949+12sb949a
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2Sd1275
Abstract: 2SD1275A
Contextual Info: Inchange Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949/949A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING
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Contextual Info: Power T ransistors 2SB949, 2SB949A 2SB949, 2SB949A Silicon NPN Epitaxial Planar Darlington Type Package Dimensions Power Amplifier, Switching Complementary Pair with 2SD1275, 2SD1275A •Features • High DC current gain Iif e • High speed switching • “Full Pack” package for simplified mounting on a heat sink with one
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2SB0949
Abstract: 2SB0949A 2SB949 2SB949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SB0949, 2SB0949A 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0949 −60 VCEO 16.7±0.3 V VEBO −5 V ICP −4
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2sb09492sb0949a2sb9492sb949a+4sc-67o-220f-a12sd12752sd1275a
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A
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2002/95/ec2sb09492sb9492sb0949a+32sb949a2sd12752sd1275a
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2SB949
Abstract: 2SB949A 2SD1275 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB949 and 2SB949A Unit: mm ● • Absolute Maximum Ratings Parameter 0.7±0.1 TC=25˚C Symbol Collector to 2SD1275 base voltage
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2sd12752sd1275a2sb9492sb949a+1collector00
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2SD1275
Abstract: 2SD1275A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB949/949A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN
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2SD1275
Abstract: 2SB949 2SB949A 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A 2S D 1275, 2S D 1275A Package D im ensions Silicon NPN Triple-D iffused Planar Darlington Type Power A m plifier C om plem entary Pair with 2SB949, 2S B949A • Features • H igh DC c u r re n t gain hre • H igh s p e e d sw itch in g
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2SD1275
Abstract: 2SB949 2SB949A 2SD1275A
Contextual Info: Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB949 base voltage 2SB949A Collector to 2SB949 emitter voltage 2SB949A Ratings Unit –60 VCBO –60 VCEO
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Contextual Info: Power Transistors 2SD1275, 2 SD1275A 2SD1275, 2SD1275A Package D im ensions S ilico n N P N Triple-D iffused P la n a r Darlington Type Power A m plifier C om plem entary Pair with 2SB949, 2SB949A • Features • High DC current gain hre • High speed switching
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2sd1275sd1275a2sd1275a2sb949+12sb949a
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2SD1275
Abstract: 2SB0949 2SB0949A 2SB949 2SB949A 2SD1275A
Contextual Info: Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB0949 2SB949 and 2SB0949A (2SB949A) Unit: mm ● • Absolute Maximum Ratings Parameter 0.7±0.1 (TC=25˚C) Symbol Collector to
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IC data book free download
Abstract: common collector PNP darlington power pack ft 103 Vbe 8 V DARLINGTON diode 104 high current darlington transistor SILICON COMPLEMENTARY transistors darlington thermal cutoff
Contextual Info: Power Transistors 2SB0949 2SB949 , 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 Parameter Collector-base voltage
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2sb09492sb9492sb0949a2sb949a+122sd12752sd1275aic data book free downloadcommon collector pnpdarlington power packft 103vbe 8 vdarlingtondiode 104high current darlington transistorsilicon complementary transistors darlingtonthermal cutoff
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2SB0949
Abstract: 2SB0949A 2SB949 2SB949A 2SD1275 2SD1275A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 7.5±0.2 2.7±0.2 2SB0949 Collector-base voltage (Emitter open) Rating
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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2sa12532sb8492sb7752sa1264+142sb9652sb13712sb13722sb8162sa12652sb12122sb9212sb8732sa11202sb1085b2sb 9892sb9412sc43412sb1416
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761b nec
Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338
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2sb9272sb7392sb10102sa1705+122sb7402sa6842sb10352sb10412sa133s2sa1313761b nec761a2sa684 nec2sb7372sb686761-b
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2SB1547
Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020
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zsb1132sb12232sb10242sa1718+142sb9502sb13422sb12242sb10222sa17192sb14642sb15472sb13011409l2sb1193hitachi 2sb 13912sb12262sb12552sb1335
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2sr5622sb13292sa17062sb1433+132sb15172sa17072sa17082sb14592sb13322sb13552sb14932sb15162sa18422sb12612sb9062sb13282sa1770
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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2SD1267
Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290
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2sd12672sd1267a2sd12682sd1270+92sd12712sd1271a2sd12722sd1279sc-622sd12802sd12732sd1273a2sd1274
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3sk241t0220fk 2411k2411+8ix 3354a699a3sk24112sa1950t092l2sb07743sk271c 5019
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