2SD381
Abstract: 2SB536 2SB536 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING
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2sd381o-220c2sb5362sb536 equivalent |
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2SB536
Abstract: 2SB536 equivalent 2SB536 M 2SD381 EMIC
Contextual Info: Inchange Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD381 ・Low collector saturation voltage APPLICATIONS ・Audio frequency power amplifier ・Low speed power switching
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2sb536o-220c2sd381o-220+32sb536 equivalent2sb536 memic
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2sb536
Abstract: 2SB536 equivalent 2SD381 2SB536 M
Contextual Info: SavantIC Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING
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2sb536o-220c2sd381o-220+3-120v2sb536 equivalent2sb536 m
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2SB536
Abstract: 2SD381 100 watts audio amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB536 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Complement to Type 2SD381 APPLICATIONS ·Audio frequency power amplifier, low speed switching.
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2sb536-120v2sd381100 watts audio amplifier |
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2SD381
Abstract: 2SB536
Contextual Info: Inchange Semiconductor Product Specification 2SD381 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching
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2sd381o-220c2sb536 |
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2SB536
Abstract: 2SD381 2SB536 equivalent 2SB536 M
Contextual Info: JMnic Product Specification 2SB536 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD381 ・Low collector saturation voltage APPLICATIONS ・Audio frequency power amplifier ・Low speed power switching PINNING PIN
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2sb536o-220c2sd381o-220+3-120v2sb536 equivalent2sb536 m
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2SB536
Abstract: 2SD381 2SB536 M
Contextual Info: SavantIC Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING
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2sb536o-220c2sd381o-220+2-120v2sb536 m
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2SD381
Abstract: 2SB537 transistor 2sd381 2SD382 2SB536 2SB536 M SB536 251C
Contextual Info: 2SD381, 382/2SB536, 537 2SD381, 382/2SB536, 537 / NPN/PNP NPN/PNP SILICON EPITA XIA L TRANSISTOR Audio Frequency Power Am plifier, Low Speed Switching £ » /F E A T U R E S 60—100W M'<9-ryy<o Suitable for driver of 60 to 100 watts audio amplifier. •» £ E T '* 5 o
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2sd381382/2sb5362sb5372sd382+52sb536transistor 2sd3812sb536 msb536251c
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NEC B536
Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
Contextual Info: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of
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2sb5362sb537/2sd3812sd3822sb537+92sd381537/2s2sb536/2sd381nec b5362sb536 necb536b-536 necb 537b537
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB536A
Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ
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2sb13n7m2sa17822sb1320a2sa1561+112sa17032sa14262sa15592sb12422sb536a2sa1301 toshiba2sa13562sb13182sa16242sa11332sa1431
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2SD304
Abstract: 2SD337 2SD309 2SD350 2SD341 2sd370 2SD311 2SD333 2sd316 2SD347
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD301 80 6 10A 50W(Tc=25ºC) 175 2500 4 5A 2SD302 2SD303 2SD304
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2sd3012sd3022sd3032sd304+142sd3052sd3062sd3072sd3082sd3092sd3102sd3372sd3502sd3412sd3702sd3112sd3332sd3162sd347
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2SB528
Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A
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2sb5022sb502a2sb5032sb503a+162sb5042sb504a2sb5052sb5062sb506a2sb5072sb5282sb5402sb5112sd3582sb5252sb5262sb5272sb5302sd2872sb539
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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mje2955tmje3055ttip73btip74+16tip74atip74btip75tip75atip75btip75c2n3055bu108an415amje2955t stbdx542n3055 audio amplifier application notebu326bu100mje13005bdv64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
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