1N1344B Search Results

1N1341B

Abstract: 1N1342B 1N1343B 1N1344B 1N1345B 1N1346B 1N1347B 1N1348B 103h
Contextual Info: EDAL I N D U S T R I E S INC 4SE D 3 0 TS 71 L 0 0 00 27 b =103 • EDL 7 ^ 0 /- / 7 Bv PIV See Chart 6 a o c case 150 @ 9 150 AMPS Vf 1.1 V @ I. 20 na 6 a 150 PIV 25 @ <3 STYLE o _c case o _c case o c case D04 P/N PIV 1N1341B 1N1342B 1N1343B 1N1344B 1N1345B

Contextual Info: 1N1344B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25

RCA 559 TO3

Contextual Info: Silicon Rectifiers Standard Types Av. RCA Type 'o A Forward Current Surge Temp.-TA 1FSM A o Voltage Package C V RRM V Temp. Range Operating o C Voltage Drop VF V 'o A 6-A Types 1N1341B 1N1342B 1N1344B 1N1345B 1N1346B 1N1347B 1N1348B 6 6 6 160 160 160 160 160

iskra diode

Abstract: HD84A 1N1198 Diode Iskra 1N1191A diode 1N1184 IN1192 1N1191 diode 1N1188 1N1199A
Contextual Info: ISKRA SEMIC CAPS IN» 37E D 4003477 O D D i n a 4 • ISK 6 A, 12 A, 20 A, 35 A U rsm Urrm Ifav Ifsm $op Uf f ic a s a “ Type Ir 'T - O l'- ó l at û, = 25 °C If at 0¡ = 25 °C Urrm = 100 °c 8.3 ms V (V) (A) (A) (°C) (V) (M ) 1N1341 B 1N1342B 1N1344B

1348B

Abstract: 1N3988 1N3990 1346B 1344B RECTIFIER DIODES SGS 1347B 1345B 1N1344B 1348-b
Contextual Info: SGS-THOMSON 1N1344B — > 48B 1N3988 / 1 N3990 ¡L iO T s« S RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP ABSOLUTE M AXIM UM RATINGS (limiting values Symbol Parameter Value Unit Average forward current *

Contextual Info: 1N1344B/BR asi SILICON POWER RECTIFIER DESCRIPTION: The A S I1 N 13 4 4 B /B R is Designed for General Purpose Power Supply Applications. • 1N1344B = Cathode to Stud • 1N1344BR = Anode to Stud MAXIMUM RATINGS lo 6.0 A @ T C= 150 °C V rrm 200 V P diss

1N1344B

Contextual Info: 1N1344B SILICON POWER RECTIFIER DESCRIPTION: The 1N1344B/1N1344BR is Designed for G eneral Purpose P ow er Supply Applications. PACKAGE STYLE DO- 4 • 1N1344B = C athode to Stud • 1N1344BR = A node to Stud s Y M B L MAXIMUM RATINGS MIN. MILLIMETERS MAX.

jan1n12

Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
Contextual Info: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

JANTX1N5554

Contextual Info: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Santa Ana Santa Ana Colorado Santa Ana Santa Ana Colorado Santa Ana Santa Ana PPC, Inc. Colorado Colorado Colorado Colorado Colorado Colorado Colorado Scottsdale Chatsworth Chatsworth

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

1N5218

Abstract: 1N5212 D2103 S3900SF D2101 1N5211 1N5213 D1201P S3901 1N5214
Contextual Info: 1TR Product Matrix G TO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA IT R 's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

BROWN BOVERI

Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
Contextual Info: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average

1n15b

Contextual Info: discrete devices jemitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Type M axim um Peak Reverse Voltage volts Maxim um Average Forward C urrent (Amps) @ Case Tem p. (°C ) 1N1203

DIODE 1N1343

Abstract: 1N120S "general diode corporation" 1N1201B 1N1202 1N1202A 1N1202B 1N1203 1N1203A 1N1203B
Contextual Info: 3869720 GENE R AL DIODE CO RP ¿Tb 86D 00324 D r-o i'i 7 Ü>iF| 3 0 ^ 7 2 0 □0DD354 3 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TT * TYPE \ 1N1201B 1N1202 1N1202A 1N1202B 1N12Q3 la 1 \ 2$ 1 '53 rn Ö Ö Do-4 Do-4 Do-4 Do-4 Do-4 ISO 200 200 200

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

mais

Abstract: 1N1341B 1N1342B 1N1343B 1N1344B 1N1345B 1N1346B 1N1347B 1N1348B
Contextual Info: EDAL INDU STR IE S INC MSE D BCHSTlb OD 002?b TD3 « E D L 'T -o /- f Y MIN. ACROSS FLATS t Bv PIV See Chart 6 a o c case 150 @ 9 150 AMPS Vf 1.1 V _ 6 a @ 150 I. 20 na @ _ PIV @ 25 g <3 STYLE <g o jc case o _c case o c case D04 P/N PIV 1N1341B 1N1342B

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )