1N1611 Search Results

Contextual Info: 1N1611AR Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9G Frequency Min. (Hz)8G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit220 @Power Level (test) (W)

Contextual Info: 1N1611 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.0G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit130 @Power Level (test) (W)1.0u

Contextual Info: 1N1611R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9G Frequency Min. (Hz)8G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit130 @Power Level (test) (W)

"Point Contact Diodes"

Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal

1N1611AR

Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed

LN358

Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

a5090d

Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
Contextual Info: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

1N2102

Abstract: DO-22 1N1611A 1N311 1n3143 DO-37 1N830A 1N2926 1n76a 1N76
Contextual Info: }{È \\ SILICON POINT CONTACT DETECTOR DIODES ASI Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resistance, broadband operation and high tangential signal sensitivity. These detector diodes are

1N358R

Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
Contextual Info: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .

1N21

Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type

1N830A

Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal