1N830 Search Results

1N830A

Contextual Info: 1N830A General Purpose UHF/MW Detector Diode 42.50 Diodes UHF/Microwave Dete. Page 1 of 1 Enter Your Part # Home Part Number: 1N830A Online Store 1N830A Diodes General Purpose UH F/MW Detector Diode Transistors Integrated Circuits Optoelectronics Thyristors

1N830A

Abstract: mil-s-19500
Contextual Info: M I L - S - 19500/229 NAVY AMENDMENT 1 25 April 1966 MILITARY SPECIFICATION SEMI CONDUCTOR DEVICE, DIODE, TYPE 1N830AM This amendment forms a part of Military Specification'MIL-S-19500/229(NAVY), 29 June 1962. Page 1, Title: Delete and substitute: "SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830A".

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

"Point Contact Diodes"

Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal

Microwave detector diodes

Abstract: DSA0054428.txt
Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

1N8284

Abstract: 1N930B 1N8313 1N8311 1N526B 1n9303
Contextual Info: MILITARY APPROVED 1N5283 thru Current Regulator Reid Effect Diodes 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • Available a s JAN, JANfX, JAN-TX-v thru M ax • Current Constant Over Wide Voltage Range • High Source Impedance

1N1611AR

Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed

LN358

Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS BREAKDOWN 1 5 0 0 JE O E C PAST NUMBER W a t t s V . tvsiu> PAST H t/8ses m u w aj Mfn W O R K IN G M A X IM U M S is lliis i: M A X IM U M iiiia l& i:? REVERSE PULSE C L A M P IN G TEM P. REVERSE LEAKAGE CURRENT VOLTAGE V A R IA T IO N

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

CIL 108

Abstract: ic tl 0741 1N830 cil-500 1N526B 1N8313 1n9303
Contextual Info: MILITARY APPROVED Current Regulator Reid Effect Diodes 1N5283 thru 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • A v a ila b le a s J A N , JANfX, JA N -T X -v thru M a x Components* (UB Package) • Current Constant Over Wide Voltage Range

Contextual Info: 02583^4 ADVANCED SEMICONDUCTOR 82D 00071 D DE~| 0550354 0000071 3 ADVANCED SEMIC OND UCTOR SILICONPOINTCONTACTDETECTORDIOOES A S I Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resis­ tance, broadband operation and high tan­

marking z2p

Abstract: 1N830A
Contextual Info: MIL-S- 19500/229 NA VY 29 June 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1NB30AM 1. SCOPE 1.1 Description. - This specification covers the detail requirem ents for a silicon diode lor UHF detector applications and is in accordance with Specification MIL-S-19500, except as otherwise specified herein.

SKE33CA

Abstract: 5KE200C 1N6202 1-SKE 200 CA 1-SKE 68 CA 1N8278 1N8288 1N6202A SKE82C 6KE440A
Contextual Info: 1.5KE440CA 1500 Watt Axial Leaded TVS TEL: 805-498-2111 FAX : 805-498-3804 DESCRIPTION FEATURES: The 1.5KE series of transient voltage suppressors are designed to protect components from over voltages caused by lightning, electrostatic discharge ESD , electrical fast transients (EFT), inductive load switching,

1N358R

Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
Contextual Info: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .

1N21

Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type

1N830A

Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal