1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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1n23 diode1n78 diode1n23wgmr1n26a diode+61n21we1n26bka2to1n415dma4148-0421n23 jan
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1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
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1n32051n25xx1n78xdma649x-xxx+101n23 diode1n53ar1n26a diodesilicon point contact mixer diodes1n4151n832an178kaba1n23wg1n26br
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1N21
Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di odes by basic construction, package style and frequency band. Type
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1n23w1n415dma64981n3747w+141n37461n3745dma6497dma5223dma5278dma52531n211n11321n23microwave detector diodes1n46031n416point contact mixer1n26
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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1n23 diode1n231n53ar1n3747+61n11321n53r1n415c1n4151n261n23 alpha
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