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    1N3746 Search Results

    1N3746 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N3746
    BKC International Silicon Point Contact Mixer Diodes Scan PDF 354.51KB 8
    1N3746
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 87.69KB 1
    1N3746
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 68.18KB 1
    1N3746
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.76KB 1
    1N3746
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 125.44KB 1
    1N3746M
    BKC International Silicon Point Contact Mixer Diodes Scan PDF 354.51KB 8
    1N3746M
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.76KB 1
    1N3746MR
    BKC International Silicon Point Contact Mixer Diodes Scan PDF 354.51KB 8
    1N3746MR
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.76KB 1

    1N3746 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1n23 diode1n78 diode1n23wgmr1n26a diode+61n21we1n26bka2to1n415dma4148-0421n23 jan PDF

    IN23C

    Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
    Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low


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    do-22do-23do-3726ghz+11supp26a1n26b1n26cin23cin23ein23wein416d1n261n25 diode1n26a diodein23wgmr PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    1n23c1n23c diode1n23 diode holder1n23 diode+6ci 3060silicon point contact mixer diodes1n23we1n21e1n23cr1n1132 PDF

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


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    1n23w1n415dma64981n3747w+141n37461n3745dma6497dma5223dma5278dma52531n211n11321n23microwave detector diodes1n46031n416point contact mixer1n26 PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


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    do-22do-23do-37ardn21h+141n21hr1n1501n1601n150r1n160r1n23c1n23c diodediode ku 14901n25 diode1n26a diode1n415c1n42941n4603r1n26br PDF

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Contextual Info: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


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    do-22do-23do-3726ghz+141n26b1n26c30mhz1000hzin23cin415cin23crin23we1n23f1n3747in261n21chp-432a1n416 PDF

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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    1n23 diode1n231n53ar1n3747+61n11321n53r1n415c1n4151n261n23 alpha PDF