1N23F Search Results

1N23F Datasheets (18)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
1N23F		MicroMetrics	S - x Band Point Contact Mixer Diode	Original	PDF	15.05KB	2
1N23F		MicroMetrics	S - X Band Point Contact Mixer Diodes	Original	PDF	17.14KB	2
1N23F		Unknown	Silicon Point Contact Mixer Diodes	Scan	PDF	354.53KB	8
1N23F		Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF	76.82KB	2
1N23F		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.37KB	1
1N23F		Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	127.87KB	1
1N23FM		MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF	153.12KB	2
1N23FM		Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF	354.52KB	8
1N23FM		Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF	76.81KB	2
1N23FM		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.37KB	1
1N23FMR		MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF	153.12KB	2
1N23FMR		Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF	354.52KB	8
1N23FMR		Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF	76.81KB	2
1N23FMR		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.37KB	1

1N23FR		MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF	153.12KB	2
1N23FR		Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF	354.52KB	8
1N23FR		Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF	76.81KB	2
1N23FR		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.37KB	1

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Glenair Inc 660-031N23F5-113G - Bulk (Alt: 660-031N23F5-113G)
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1N23F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FGFA Abstract: 1N23E sft 43 1N23CR 9375MHz 1N23CMR 1N23D 1N23DM 1N23DR 1N23EM Contextual Info: - 166 - MI J& % a s * 1N23CMR Bn * * * * B£ B£ 0 'S Q1 1N23CR 1N23D 1N23DM 1N23DMR * 1N23DR Bn * 1N23EM B l am * 1N23E * 1N23BMR * 1N23ER * 1N23F * 1N23FM * 1N23FMR * 1N23P8 * 1N23G * 1N23GM * 1N23GMR * 1N23GR * 1N23WD * 1N23WDM * 1N23WE * 1N23WBM * 1N23WF	OCR Scan	1n23cmr 1n23cr 1n23d 1n23dm +91m230mr ln23c ffi14 9375mhz 1n23dr 1n23e fgfa sft 43 1n23em	PDF
JAN1N23WG Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED	OCR Scan	jan1n23wg 1n21* diode detector holder jan1n21we 1n23c +61n23c diode 1n53c jan1n21wg ma490e ma492c 1n831a	PDF
1n415c Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C Contextual Info: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	OCR Scan	cs100 1n23f 1n23g 1n23wg +111n23h cs101 1n415c 1n21c 1n21d 1n21e 1n21f 1n21g 1n21we 1n416g 1n416c	PDF
1N23 diode Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local	OCR Scan	1n23 diode 1n78 diode 1n23wgmr 1n26a diode +61n21we 1n26b ka2to 1n415 dma4148-042 1n23 jan	PDF
IN23C Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff\|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low	OCR Scan	do-22 do-23 do-37 26ghz +11supp26a 1n26b 1n26c in23c in23e in23we in416d 1n26 1n25 diode 1n26a diode in23wgmr	PDF
1N23 diode Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100 Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	cs100 cs101 1n23 diode 1n23c +71n23b 1n21c 1n23a case cs101 1n415c diode 1n23wg 1n415h	PDF
1N23 diode Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for	OCR Scan	1n3205 1n25xx 1n78x dma649x-xxx +101n23 diode 1n53ar 1n26a diode silicon point contact mixer diodes 1n415 1n832a n178 kaba 1n23wg 1n26br	PDF
FD6666 diode Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5	OCR Scan	a4/10 a5/62 a5/105 a1000 +16aa100 aa110 aa111 aa112 aa113 aa114 fd6666 diode diode by100 1n4q07 ba100 diode by164 bb139 bay38 diode aa119 1s184 diode 1n82	PDF
1N23C Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132 Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf\| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:	OCR Scan	1n23c 1n23c diode 1n23 diode holder 1n23 diode +6ci 3060 silicon point contact mixer diodes 1n23we 1n21e 1n23cr 1n1132	PDF
1N21* Diode Detector Holder Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C Contextual Info: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description	OCR Scan	1n21* diode detector holder ma492c 1n23c diode ma41513 +61n493c 1n23g silicon point contact mixer diodes 1n415g jan-1n21we 1n23c	PDF
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	do-22 do-23 do-37 ardn21h +141n21hr 1n150 1n160 1n150r 1n160r 1n23c 1n23c diode diode ku 1490 1n25 diode 1n26a diode 1n415c 1n4294 1n4603r 1n26br	PDF
in23c Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 Contextual Info: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make	OCR Scan	do-22 do-23 do-37 26ghz +141n26b 1n26c 30mhz 1000hz in23c in415c in23cr in23we 1n23f 1n3747 in26 1n21c hp-432a 1n416	PDF
1N23 diode Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure	OCR Scan	1n23 diode 1n23 1n53ar 1n3747 +61n1132 1n53r 1n415c 1n415 1n26 1n23 alpha	PDF
CS100 Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C Contextual Info: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	cs100 cs101 cs-100 1n415c +71n23 diode 1n23b 1n23 1n21e 1n416c cs-101 1n21c	PDF