1N416 Search Results

44258

Abstract: 1N473SA 1W4751A 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B AT617 1N4166B
Contextual Info: ZENER DIODES P irt# Nominal Zener Voltjga T n t Currant M u lm u a Oynamic Impetfanc* *n<ûl 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4166B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B

Contextual Info: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 11'd4403 B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B

1N416E

Abstract: DO-23
Contextual Info: 1N416E General Purpose UHF/MW Mixer Diode 98.98 Diodes UHF/Microwave Mixer . Page 1 of 1 Enter Your Part # Home Part Number: 1N416E Online Store 1N416E Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

ecg rectifier diode

Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Contextual Info: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

Contextual Info: 1N4162D Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)25m Tolerance (%)1 P(D) Max. (W)1.0¥ Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k Maximum Operating Temp (øC)200þ Package StyleDO-29

1N416B

Abstract: 1N4162B 1N4158B 1N4159B 1N4160B 1N4161B 1N4163B 1N4164B 1N4165B 1N4166B
Contextual Info: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 1N4403B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B 1N4410B

CI 3060 elsys

Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
Contextual Info: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

1N415C

Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
Contextual Info: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3

1N4202

Abstract: 1N4184 1N4184 DIODE 1N4188 diode 1N4200 in2970 1N4166 1N4205 1N4198 1N4174
Contextual Info: Zener Type No. Zener Voltage at In Volts @ mA 1N4123119 20 1N412419 20) 1N41251&#39; 9201 39.0 43.0 47.0 1N412619 20t 1N41271&#39; 9 201 1N4128M9 20> 51.0 56.0 60.0 62.0 68.0 75.0 82.0 87.0 91.0 100.0 1N4129 ' 9 201 1N413019 20’ 1N413119 201 1N4132119 201 1N4133119 201

Diode 1N41

Abstract: DIODES 1N4194 1N4184 1N4184 DIODE 1N411 1N4161 1n4202 IN2979 1N4123 1N4126
Contextual Info: Zener Type No. Zener Voltage at In Volts @ mA 1N4123119 20 1N412419 20) 1N41251&#39; 9201 39.0 43.0 47.0 1N412619 20t 1N41271&#39; 9 201 1N4128M9 20> 51.0 56.0 60.0 62.0 68.0 75.0 82.0 87.0 91.0 100.0 1N4129 ' 9 201 1N413019 20’ 1N413119 201 1N4132119 201 1N4133119 201

1N4200

Abstract: 1N4202 1n4209 1N3042 1N4184 1N4207 in3004 diode 1n3020 zener diode IN2979 1N4161
Contextual Info: Zener Type No. Zener Voltage at 1ZT Volts @ mA Max. Zener Impedance @ lZT Ohms 3.0 4.0 " 1N2979 1N2980 1N2981 1N2982 1N2983 2N2984 1N2985 1N2986 1N2987 1N2988 1N2989 1N2990 1N2991 1N2992 1N2993 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 30.0 33.0 36.0

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

10 watt zener diode

Abstract: 1N4190A 1N4181A zener 3 w 1N4158A 1N4166A 1N4172A 1n4192a 1N4164A 1N4160A
Contextual Info: .5 TO 100 WATT UNIPOLAR ZENER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR DIE ZENER VOLTAGE - 6.8 TO 200 VOLTS .5 TO 100 WATT MAXIMUM POWER DISSIPATION

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Z82D5

Abstract: "Zener Diodes" 1n5048 1N5008 1N4189 1N4730 zener 1N4653 1N4671 1n4849 1N5012 1N4171
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Pow er E arly In d u stry S ta n d a rd E arly In d u stry S ta n d a rd L o w N o ise L o w C u rre n t M il - S p e c L o w C u rre n t 50 u A Low Leakage L o w N o is e L o w C u rre n t M il - S p e c In d u stry

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

3308B

Abstract: 1N4158A 1N4159A 1N4160A 1N4161A 1N4162A 1N4163A 1N4164A 1N4165A 1N4166A
Contextual Info: .5 TO 10 WATT UNIPOLAR ZENER FLIP-DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED SURFACE MOUNT UNIPOLAR FLIP-DIE ZENER VOLTAGE- 6.8 TO 200 VOLTS .5 TO 10 WATT MAXIMUM POWER DISSIPATION

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

IN23C

Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1N23 diode

Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed

Contextual Info: zener Diodes POWER - CASE Continued . ' ' .- ' ' ZENER ^ > VOLTAGE DO-41 GENERAL PURPOSE GENERAL PURPOSE INDUSTRY STANDARD 3.3 1N4728A 3.6 1N4729A 3.9 1N4730A 4.3 1N4731A 4.7 1N4732A 5.1 1N4733A 5.6 1N4734A 6.2 GENERAL PURPOSE 1N4735A