1N358 Search Results

Contextual Info: 1N3584 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.05 Maximum Operating Temp (øC)75 Package StyleAxial-D

Contextual Info: 1N3587 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)520 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N3581 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.50 Maximum Operating Temp (øC)175 Package StyleAxial-D

Contextual Info: 1N358R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq12G Frequency Min. (Hz)1G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15 @Power Level (test) (W)

1N21B diode

Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Contextual Info: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.

Contextual Info: 1N3583 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11.7 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)750m Z(z) Max. (ê) Dyn. Imped.25 Temp Coef pp/10k.10 Maximum Operating Temp (øC)75 Package StyleAxial-D

Contextual Info: 1N3585 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)520 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N3586 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)520 @Temp. (øC) (Test Condition)25#

1N3582

Abstract: 1N3580 1N4296 1N3582A 1n3583 1n3580a
Contextual Info: r 1 WATT, Metal TC Case DO-13 TEMPERATURE RANGE EFFECTIVE TEMPERATURE COEFFICIENT mV °C %/• C JEDEC TYPE NUMBER NOMINAL ZENER VOLTAGE Vzt VOLTS TEST CURRENT mA MAXIMUM ZENER IMPEDANCE ZzT @ I z T Ohms 1N3580 1N3580A 1N3580B 11.7 11.7 11.7 7.5 7.5 7.5

1N358R

Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
Contextual Info: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .

1N3582A

Abstract: LM3909N
Contextual Info: 1N3582A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N3582A Availability Online Store

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N47A

Contextual Info: jemitronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

1N1611AR

Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed

LN358

Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

IN4773

Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

1N623A

Abstract: 1N623 silicon voltage reference diodes TN945 DO13 1n2169 1NB25A 1N2621A 1N428 1N2164A
Contextual Info: lomitronlcr discrete devices SEMICONDUCTORS Sem itronics C orp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Type Norn. Zener Dynamic Zener Voltage, Impedance, Current Vz volts Zz (ohms) lz (mA) 1N428 1N1735 6.2 6.2

a5090d

Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
Contextual Info: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71