Untitled
Abstract: No abstract text available
Text: HSCH6312 SCHOTTKY MIXER/DETECTOR DIODE DESCRIPTION: The HSCH6312 is a Hermatically Sealed , Silicon Medium Barrier Schottky Mixer/Detector Diode Designed for X-Band Operation. PACKAGE STYLE 860 MAXIMUM RATINGS I 20 mA V 4.0 V PDISS 150 mW @ TC = 25 OC TJ -65 OC to +175 OC
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HSCH6312
HSCH6312
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s276
Abstract: ODS-276 23/AF30Z-30-00-20
Text: Preliminary Specification High Reliability Semiconductor Schottky Detector Diodes ML40215-S-120 ML40215-S-276 V1.00 ODS 120 Outline Features x x x Low I/F Noise High Sensitivity Space Qualified Description The ML40215-S is a low barrier N type Silicon detector diode in the ODS
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ML40215-S-120
ML40215-S-276
ML40215-S
the883
40215-S-120,
40215-S-276
s276
ODS-276
23/AF30Z-30-00-20
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Untitled
Abstract: No abstract text available
Text: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and
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LTC5505-1/LTC5505-2
5505-X
300MHz
LTC5505-1,
28dBm
18dBm
LTC5505-2,
32dBm
12dBm
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6v dc to dc mobile charger circuit
Abstract: ms10 diode wireless mobile charger block diagram 6v dc to dc mobile charger circuit with 500mA metal detector diagram PI LTRW DIODE RF DETECTOR LT 543 IC pin diagram schematic diagram of mobile phone charger audio envelope detector diode
Text: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and
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LTC5505-1/LTC5505-2
5505-X
300MHz
LTC5505-1,
28dBm
18dBm
LTC5505-2,
32dBm
12dBm
6v dc to dc mobile charger circuit
ms10 diode
wireless mobile charger block diagram
6v dc to dc mobile charger circuit with 500mA
metal detector diagram PI
LTRW
DIODE RF DETECTOR
LT 543 IC pin diagram
schematic diagram of mobile phone charger
audio envelope detector diode
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LTRW
Abstract: RF AMPLIFIER marking S5 RF 900MHz TO 1800MHz MARKING bw SOT23 LTC DWG 05-08-1633 dual directional coupler LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2ES5
Text: Final Electrical Specifications LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range October 2001 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer
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LTC5505-1/LTC5505-2
5505-X
300MHz
LTC5505-1,
28dBm
18dBm
LTC5505-2,
32dBm
12dBm
LTRW
RF AMPLIFIER marking S5
RF 900MHz TO 1800MHz
MARKING bw SOT23
LTC DWG 05-08-1633
dual directional coupler
LTC5505-1
LTC5505-1ES5
LTC5505-2
LTC5505-2ES5
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sbx201c
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage
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ENA0628B
SBX201C
013A-015
A0628-5/5
sbx201c
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Untitled
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628 SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.
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ENA0628
SBX201C
A0628-3/3
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Untitled
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.
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ENA0628A
SBX201C
A0628-3/3
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S11 CASE MARKING diode
Abstract: 0-834-10 SBX201C 2V320
Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.
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SBX201C
ENA0628A
A0628-3/3
S11 CASE MARKING diode
0-834-10
SBX201C
2V320
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Untitled
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage
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SBX201C
ENA0628B
A0628-5/5
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Untitled
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.
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SBX201C
ENA0628A
A0628-3/3
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LG diode 831
Abstract: MA4E2054-287T
Text: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer
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MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
LG diode 831
MA4E2054-287T
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S11 SCHOTTKY diode
Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
Text: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band
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MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
S11 SCHOTTKY diode
MA4E2054B-287T
MA4E2054-1141T
MA4E2054A-1146T
MA4E2054A-287T
MA4E2054B
MA4E2054E-1068T
MA4E2054D-287
Surface Mount RF Schottky Barrier Diodes
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Untitled
Abstract: No abstract text available
Text: 5082-2759 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit
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Freq10G
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Untitled
Abstract: No abstract text available
Text: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
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DC1331
375GHz
150pA
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BAV46
Abstract: BAS46 cl8960 X-band doppler radar module Gunn Diode at power supply circuit doppler radar module Gunn Diode x-band BAV46 diode gunn diode radar module DO-23
Text: 7'¿fl OC X BAS46 X-BAND MIXER/DETECTOR DIODE Silicon S chottky barrier diode in DO-23 outline specially designed fo r use in Doppler radar systems and intruder alarms where low 1 /f noise and high sensitivity are required. May be used fo r both mixer and detector applications. This device is a direct replacement fo r the BAV46 and has an all-bonded
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BAS46
DO-23
BAV46
BAS46
cl8960
X-band doppler radar module
Gunn Diode at power supply circuit
doppler radar module
Gunn Diode x-band
BAV46 diode
gunn diode radar module
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Untitled
Abstract: No abstract text available
Text: • 37bô5E2 D016455 TOS « P L S B Si GEC PLE S S EY SEMICONDUCTORS DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
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D016455
DC1331
600mV
700mV
150fF
375GHz
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tangential
Abstract: AEY17 germanium rectifier diode K1007
Text: AEYI7 MICROWAVE DETECTOR DIODE Sub-m iniature germ anium bonded backward diode p rim arily intended for broadband low lev el d etecto r applications at X -ban d. QUICK R E FE R E N C E DATA Frequency range 1 to 18 GHz Typ. zero bias tangential sen sitivity at X-band
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AEY17
K1007
AEY17
18GHz,
45MHz)
375GHz,
200uW,
tangential
germanium rectifier diode
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tba 450
Abstract: dc46a GUNN DIODE plessey
Text: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B
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DB3031
17dBmf
1-18GHz
tba 450
dc46a
GUNN DIODE plessey
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Untitled
Abstract: No abstract text available
Text: P^piG EC PLESSEY DC1501/12/44 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES FOR INTRUDER ALARM APPLICATIONS DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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DC1501/12/44
300mW
DC1544
DC1501
DC1512
150pA
-20Bm)
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Untitled
Abstract: No abstract text available
Text: 37bfl522 0013472 0^4 « P L S B Sü GEC PLESSEY SEMICONDUCTORS DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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37bfl522
DC1553/57
400mW
300mW
DC1553
DC1557
-20dBm)
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Untitled
Abstract: No abstract text available
Text: P^piGEC PLESSEY DC1551/54/58 SILICON SCHOTTKY X-BAND ZERO BIAS WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable lor applications requiring high performance detectors. These diodes can be supplied in matched pairs by the
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DC1551/54/58
400mW
250mW
DC1551
DC1554
100pA
DC1558
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Untitled
Abstract: No abstract text available
Text: 37bô5 22 QQlfl4êO lfc>G « P L S B M GEC PIESSEY SEMICONDUCTORS DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance
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DC1514/21/26
DC1514
DC1521
DC1526
350mV
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Untitled
Abstract: No abstract text available
Text: P B tiG E C plessey DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance detectors. These diodes can be supplied in matched pairs by the
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DC1514/21/26
DC1514
DC1521
DC1526
100pA
350mV
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