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    16N90 Search Results

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    STMicroelectronics STF16N90K5

    Transistor MOSFET N-CH 900V 15A 3-Pin TO-220FP Tube - Bulk (Alt: 47AK6945)
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    Avnet Americas () STF16N90K5 Bulk 1
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    STF16N90K5 Tube 24 Weeks 1,000
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    Newark STF16N90K5 Bulk 1,248 1
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    STMicroelectronics STF16N90K5 236 1
    • 1 $5.80
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    TME STF16N90K5 100 1
    • 1 $5.05
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    Avnet Silica STF16N90K5 3,750 25 Weeks 50
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    EBV Elektronik STF16N90K5 25 Weeks 50
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    STMicroelectronics STB16N90K5

    Power MOSFET, N Channel, 900 V, 15 A, 330 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: STB16N90K5)
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    Avnet Americas STB16N90K5 Tape & Reel 36 Weeks 1,000
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    Newark () STB16N90K5 Tape & Reel 2,917 100
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    STB16N90K5 Cut Tape 2,917 1
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    STMicroelectronics STB16N90K5 1,166 1
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    TME STB16N90K5 1,000 1,000
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    Avnet Silica STB16N90K5 1,000 25 Weeks 1,000
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    EBV Elektronik STB16N90K5 25 Weeks 1,000
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    Sirectifier SMOS16N90B2L

    Transistor: N-MOSFET; unipolar; TO247AD
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    TME SMOS16N90B2L 1
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    HUBER+SUHNER SF118/11N/16N/9.0

    SUCOFLEX118, 11N-653,16N-656, L 9.0IN/228.6MM
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    Richardson RFPD SF118/11N/16N/9.0 1
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    Avdel 09616N9081S

    INSERTO M10 ACC. ZIN BIANCO P
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    DB Roberts 09616N9081S
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    16N90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V ID25 = 16 A RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original
    16n90qo-247o-268o-264+1o-268aa PDF

    Contextual Info: HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 Ω IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original
    16n90qo-247728b1 PDF

    IXFH16N90Q

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original
    16n90qo-247o-268ixfh16n90q PDF

    16N90

    Abstract: TO-264 weight 16N90Q
    Contextual Info: HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 Ω IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR


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    16n90qo-247o-264728b1+216n90to-264 weight PDF

    TO264 footprint

    Abstract: 16N90Q
    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original
    16n90qto264 footprint PDF

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original
    16n90qo-247 PDF

    16N90

    Contextual Info: 16N90 16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS


    OCR Scan
    ixfh16n90ixfx16n90o-247247tm+116n90 PDF

    16N90

    Abstract: IXFH16N90 IXFX16N90
    Contextual Info: 16N90 16N90 HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    ixfh16n90ixfx16n90247tm16n90 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    o-247plus247isoplus247tmo-204+15o-268o-26476n06-1176n06-1280n06180n06c1162c128026n6060n25c1328120n20c1146c1104c1158 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original
    o-247plus247isoplus247tmo-204+16o-268o-26476n06-1176n06-1280n06180n06c1146c1162c1278c1106c1156ixfh 60n60c1142c1238c1104ixfn 26n60 PDF

    Contextual Info: □ IXYS HiPerFET V DSS 16N90 16N90 Power MOSFETs ^D25 R DS on N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family = 900 V = 16 A = 0.65 Q t < 200 ns Preliminarydata Symbol TestConditions V T j = 25°C to 150°C T j = 25°C to 150°C; RGS = 1 M£i


    OCR Scan
    ixfh16n90ixfx16n90-247a PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan
    76n06-1176n07-1176n07-1267n10+1675n1050n2058n2074n2080n2035n3052n3020n80ixfh 60n60ixfx 44n8015n107n80e51g44n8060n6046n50 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan
    axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50 PDF