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Amphenol RF 81115N-1000 Conn Mini-UHF PL 0Hz to 2.5GHz 50Ohm Crimp ST Cable Mount Tin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	81115N-1000		80			1 - 10 $9.54 100 $5.88 1000 $5.79 10000 $5.77	Buy Now
Amphenol RF 081-115N-1000 RF Connector Mini-UHF Straight Crimp Plug for RG-58 50 Ohm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	081-115N-1000		80			1 - 10 $9.54 100 $5.88 1000 $5.79 10000 $5.77	Buy Now
RS	081-115N-1000	Bulk	75		1	1 $9.77 10 $9.77 100 $7.96 1000 $7.52 10000 $7.52	Buy Now
TME	081-115N-1000				100	1 - 10 - 100 $6.41 1000 $6.41 10000 $6.41	Get Quote
Interstate Connecting Components	081-115N-1000					1 - 10 - 100 $7.57 1000 $7.13 10000 $6.65	Buy Now
PEI Genesis	081-115N-1000					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
Glenair Inc 380FS115N1004A3 - Bulk (Alt: 380FS115N1004A3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	380FS115N1004A3	Bulk		3 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	380FS115N1004A3	Bulk			1	1 $703.18 10 $438.30 100 $303.01 1000 $303.01 10000 $303.01	Buy Now
Interstate Connecting Components	380FS115N1004A3					1 $697.72 10 $424.89 100 $424.89 1000 $424.89 10000 $424.89	Buy Now
FDH Electronics	380FS115N1004A3				1	1 $1036.82 10 $864.01 100 $838.60 1000 $781.16 10000 $781.16	Get Quote
Amphenol Corporation 081-115N-1000 - Bag (Alt: 081-115N-1000)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	081-115N-1000	Bag		14 Weeks	100	1 - 10 - 100 $7.03 1000 $5.88 10000 $5.74	Buy Now
TTI	081-115N-1000	Each	527		1	1 $9.03 10 $8.48 100 $6.03 1000 $5.96 10000 $5.96	Buy Now
Richardson RFPD	081-115N-1000				100	1 $6.19 10 $6.19 100 $6.19 1000 $6.19 10000 $5.78	Buy Now
SPC Multicomp MT15N100J500CT Cap, Aec-Q200, 10Pf, 50V, Mlcc, 0402; \|Multicomp Pro MT15N100J500CT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	MT15N100J500CT	Tape & Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
	MT15N100J500CT	Tape & Reel	826		500	1 - 10 - 100 - 1000 $0.01 10000 $0.01	Buy Now
	MT15N100J500CT	Cut Tape	826		10	1 - 10 $0.01 100 $0.01 1000 $0.01 10000 $0.01	Buy Now

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15N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	15n100c o-220ab o-263	PDF
15N100C Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15n100c o-220ab o-263 728b1 +415n10 to-263aa ixgp 15n100c to-220 footprint	PDF
15n10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15n100q o-247 o-268 o-268aa +115n10	PDF
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	15n100c o-220ab o-263 728b1	PDF
15N100Q Abstract: 15n10 15N100 IXFH15N100Q Contextual Info: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15n100q o-247 15n10 15n100 +1ixfh15n100q	PDF
15n10 Abstract: 15N100C 15N100 Contextual Info: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n100c o-220ab o-263 15n10 +115n100	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15n100q o-247 o-268 o-268aa	PDF
Contextual Info: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n100c o-220ab o-263	PDF
Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	15n100c o-268 o-247 o-268aa	PDF
15N100 Abstract: IXTN 79 N 20 IXTN15N100 Contextual Info: MegaMOSTMFET IXTN 15N100 VDSS = 1000 V = 15 A = 0.6 Ω ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	15n100 ot-227 ixtn 79 n 20 ixtn15n100	PDF
Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	15n100c o-268 o-247 o-268aa	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15n100q o-247	PDF
15N100 Contextual Info: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A	OCR Scan	15n100 ot-227 cto150 c2-90 +1c2-91	PDF
15n10 Abstract: 15N100 15N100Q IXFH15N100Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class VDSS = ID25 = RDS on = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15n100q o-247 15n10 15n100 +1ixfh15n100q	PDF

1SN10 Contextual Info: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	ixtn15n100 ot-227 e1s3432 c2-98 +315n100 c2-99 1sn10	PDF
Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings	OCR Scan	ixfh/ixft/ixfx14n100 ixfh/ixft/ixfx15n100 14n100 15n100 +2o-247 to150	PDF
D1488 Abstract: TO-247 AD Contextual Info: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings	OCR Scan	ixfh/ixft/ixfx14 ixfh/ixft/ixfx15 10transientthermallmpedance d1488 +1to-247 ad	PDF
15N100 Abstract: 15n10 14N100 Contextual Info: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions	OCR Scan	ixfh/ixft/ixfx14n100 ixfh/ixft/ixfx15n100 14n100 15n100 +3o-247 247tm 15n10	PDF
15N100 Contextual Info: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings	OCR Scan	ixfh/ixfx15 14n100 15n100 k30ts	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76n07-11 76n07-12 67n10 75n10 +1442n20 50n20 58n20 o-247 o-204 75n1 6n80 ixtm20n60 irfp 260 m ixfh k 15n60 ixtn 44n50 ks 4400 204 3b	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10a 52-14n01 52-16n01 55-12n +1655-14n07 55-18n 60-08n 60-16n 62-08n 62-12n 40n80 13nb0 60n60 dsei 20-12 33n120 vuo 35-12 n 0 7 ds117-12a ds117-12 26n60 4410pi	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Contextual Info: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	o-247 t0-204 o-264 76n06-11 +1475n06-12 110n06 76n07-11 76n07-12 ixys ixfn 55n50 170n10 c1106 ixfh26n50 c1124 ixfn170n10 c1120 15n100 76n06 ixfn36n60	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	o-247 plus247 isoplus247tm o-204 +15o-268 o-264 76n06-11 76n06-12 80n06 180n06 c1162 c1280 26n60 60n25 c1328 120n20 c1146 c1104 c1158	PDF
ixtn15n100 Contextual Info: MegaMOS FET 15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient	OCR Scan	ixtn15n100 ot-227 000e21d	PDF

15N100 Search Results

15N100 Price and Stock

Amphenol RF 81115N-1000

Amphenol RF 081-115N-1000

Glenair Inc 380FS115N1004A3

Amphenol Corporation 081-115N-1000

SPC Multicomp MT15N100J500CT

15N100 Datasheets Context Search

15N100C

15n10

15N100Q

15n10

15N100

15N100

15n10

1SN10

D1488

15N100

15N100

75N1

40n80

ixys ixfn 55n50

C1162

ixtn15n100