12CTQ045S Search Results

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: VS-12CTQ.SPbF, VS-12CTQ.-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 6 A FEATURES VS-12CTQ.-1PbF VS-12CTQ.SPbF • • • • Base common cathode 2 Base common cathode 2 • • • 2 1 Common 3 Anode cathode Anode 2 1 Common 3

Contextual Info: VS-12CTQ.S-M3, VS-12CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES D2PAK • • • • TO-262 Base common cathode 2 • • Base common cathode 2 • • 2 1 Common 3 Anode cathode Anode VS-12CTQ.S-M3

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

203CNQ100

Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Contextual Info: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: international Schottky Diode lioRRecdfier Center Tap - Surface Mount 6.6-30 Amps 6 Part Num ber >F(AV) @ TC (A) (°C) V FM @ (FM (D (V ) VR R M (V) (2 ) (3 ) eAS (m J ) •a r 30 40 50 60 90 100 6.6 6.6 6.6 6.6 6.6 6.6 97 97 92 92 94 94 0.63 0.63 0.67 0.67

Contextual Info: VS-12CTQ.SPbF, VS-12CTQ.-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 6 A FEATURES VS-12CTQ.-1PbF VS-12CTQ.SPbF • • • • Base common cathode 2 Base common cathode 2 • • • 2 1 Common 3 Anode cathode Anode 2 1 Common 3

SMD-220

Abstract: 802-4
Contextual Info: Bulletin PD-20554 rev. C 07/06 12CTQ. 12CTQ.S 12CTQ.-1 SCHOTTKY RECTIFIER 12 Amp IF AV = 12Amp VR = 35/ 45V Description/ Features Major Ratings and Characteristics Characteristics 12CTQ Units IF(AV) Rectangular waveform 12 A 35 / 45 V VRRM range The 12CTQ center tap Schottky rectifier series has been

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

Contextual Info: VS-12CTQ.S-M3, VS-12CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES D2PAK • • • • TO-262 Base common cathode 2 • • Base common cathode 2 • • 2 1 Common 3 Anode cathode Anode VS-12CTQ.S-M3

Schottky Diode SOT-89

Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Contextual Info: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16

12CTQ045S

Abstract: PD-21023 12CTQ045SPBF 12CTQ 12CTQ045-1 40HF P460 SMD-220
Contextual Info: Bulletin PD-21023 rev. A 06/06 12CTQ.SPbF 12CTQ. -1PbF SCHOTTKY RECTIFIER 12 Amp IF AV = 12Amp VR = 35/ 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 12 A 35 / 45 V 690 A 0.53 V - 55 to 175

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

30BQ060

Abstract: 10MQ090 10BQ040 MBRB20100CT 10bq060 20057 8tq100s transistors sot-223 10TQ045S 12CTQ045S
Contextual Info: SURFACE-MOUNT PACKAGES 6A TO 30A .77A TO 1.7A 1A 3A 4A D2Pak 19TQ015S [20266] 32CTQ030S [20267] — D-64 SMA — — 10MQ040 15MQ040 SMB 10BQ015 [20396] — 10BQ040 [20397] SMC 30BQ015 [20490] — 30BQ040 [20439] SOT-223 — 20CJQ030 [20477] — — —

95032

Abstract: 12CTQ035SPBF
Contextual Info: 12CTQ.SPbF, 12CTQ.-1PbF Vishay High Power Products Schottky Rectifier, 2 x 6 A FEATURES 12CTQ.-1PbF 12CTQ.SPbF • • • • Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK TO-262