FE6D Search Results

FE6D

Contextual Info: FE6A thru FE6D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE6A thru FE6D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

fe6d

Abstract: FE6D G-4
Contextual Info: FE6A to FE6D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

FE6D G-4

Contextual Info: FE6A thru FE6D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

FE6D

Contextual Info: FE6A thru FE6D Glass Passivated Ultrafast Rectifier Case Style G4 * d e ntFeatures e t Pa 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. Reverse Voltage 50 to 200 V Forward Current 6.0 A 0.300 (7.6) MAX. ♦ High temperature metallurgically bonded construction

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage -5 0 to 200 Volts Forward Current -6.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ 1.0 2 5 .4 MIN. 0. 1 1 5(2 .9) DIA. ♦ ♦ ♦ ♦ 0 .3 0 0 (7.6) MAX High temperature metallurgically bonded construction

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes D * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time-for high efficiency

fe6d

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes FEATURES Case Style G4 I V J ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 0 3 0 0 7 6 MAX V i i High temperature m etallurgical^ bonded construction

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 6.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability

FE6D

Abstract: MIL-S-19500
Contextual Info: FE6A thru FE6D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage 50 to 200 Volts - FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ T 1.0 25.4 MIN. 0.180 (4 .6) 0. 1 15 (2.9) DIA. ♦ ♦ ♦ ♦ 0.300 ( 7.6) MAX. A 0.0 4 2 ( 1.07) 0.038 (0.962) DIA. Forward Current - 6 . 0 Amperes

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current - 6.0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability

FE6D

Contextual Info: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes D * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time-for high efficiency

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

Contextual Info: 1234563789A7B79C422B Pb Free 29A !F67"!  8369A 12234567 B#$2C 12234567 1234567 89AB9CD5E6FE 44 서식번호 : SSC- QP- 7- 07- 25 Rev.0.0 1234563789A7B79C422B %5A2A#5& F4 '2#CA E4 ()#*B25$9+$B$5C9A,# -4 *2C"9*5.9C92C##

Contextual Info: 1234563789A7B79C422B Pb Free 29A !F6"#!  8369A 12234567 B$%2C 12234567 1234567 89AB9CD5E6FE 44 서식번호 : SSC- QP- 7- 07- 25 Rev.0.0 1234563789A7B79C422B &5A2A$5' F4 (2$CA E4 )*$+B25%9,%B%5C9A-$ .4 +2C#9+5/9C92C$$

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

ASSIST09

Abstract: M6809 MC6809-MC6809E MC6809E A66 500X MC6809 M6809PM f968 mc6829 fd9926
Contextual Info: M6809PM/AD M6809PM AD MC6809-MC6809E 8-BIT MICROPROCESSOR PROGRAMMING MANUAL Original Issue: March 1,1981 Reprinted: May 1983 MOTOROLA INC., 1981 TABLE OF CONTENTS Paragraph No. Title Page No. SECTION 1 GENERAL DESCRIPTION 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8

Contextual Info: FE6A . FE6G FE6A . FE6G Superfast Switching Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2012-06-21 Nominal current Nennstrom ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Type Ø 1.2 50.400 V Plastic case