8YV27-200
Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50
|
OCR Scan
|
vr-50vr-100vr-150vr-300+15vr-500vr-600vr-1000gi1001gi10048yv27-200vr300fep16gtufs400fes16ctfes16dtfes16ftfes16gtfep30hp/45fe5b
|
PDF
|
GI1001
Abstract: GI1004 DO-204AP GI1002 GI1003
Contextual Info: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere D * FEATURES P A T E N T E DO-204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4)
|
Original
|
gi1001gi1004do-204apmil-s-19500+350mvp-pgi1002gi1003
|
PDF
|
GI1004
Abstract: DO-204AP GI1001 GI1002 GI1003
Contextual Info: GI1001 THRU GI1004 Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 1.0 A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency
|
Original
|
gi1001gi1004do-204apmil-s-19500+350mvp-pgi1002gi1003
|
PDF
|
GI1004
Abstract: DO-204AP GI1001 GI1002 GI1003
Contextual Info: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere D * FEATURES P A T E N T E DO-204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4)
|
Original
|
gi1001gi1004do-204apmil-s-19500+350mvp-pgi1002gi1003
|
PDF
|
|
Contextual Info: Gl 1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere _ FEATURES_ DO-2Q4AP <<? T 0.034 0.86 0.0 2 8 (0.71) 1.0 DIA. (25 .4) ♦ ♦ ♦ ♦ ♦ MIN. HV \J A
|
OCR Scan
|
gi1004gi1001 |
PDF
|
GI1004
Contextual Info: GM001 THRU GI1004 MINIATURE GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 2.5 Amperes FEATURES ♦ ♦ ♦ ♦ DO-2Q4AP .0 2 8 .7 1 ♦ ♦ ♦ ♦ 1.0(25.4) MN A W I 16.1) / MAX. 1 .1 5 0 (3 .8 ) ♦ High temperature soldering guaranteed:
|
OCR Scan
|
gm001gi1004mil-s-19500d0-204ap |
PDF
|
GI1004
Contextual Info: GII 001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current 1.0 Amperes - FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability
|
OCR Scan
|
gi1004mil-s-19500mil-std-2021000a |
PDF
|
GI1004
Abstract: DO-204AP GI1001 GI1002 GI1003
Contextual Info: GI1001 to GI1004 VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
|
Original
|
gi1001gi1004do-204apmil-std-750+2gi1002gi1003
|
PDF
|
GI1004
Contextual Info: GI1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere _ FEATURES_ PO-.2Q4AP 1.0 ¿5.4, MIN h u4 «-T 1.0 (25.4 MIN 1 Dimensions in inches and (millimeters) • Brazed lead assembly is covered by Patent No. 3,930,30
|
OCR Scan
|
gi1001gi1004mil-s-19500d0-204ap |
PDF
|
|
Contextual Info: Gl 1001 THRU GI1004 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere _ FEATURES_ DO-2Q4AP ♦ ♦ ♦ ♦ ♦ I 0 24011 I MA \J- i 0 25.4) MIN 1 D im e n s io n s in in c h e s a n d (m illim e te rs )
|
OCR Scan
|
gi1004mil-s-19500d0-204ap |
PDF
|
GI1004
Abstract: MIL-S-19500 DO-204AP GI1001 GI1002 GI1003
Contextual Info: GI1001 thru GI1004 Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200V Forward Current 1.0A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. • • • • • High temperature metallurgically bonded construction
|
Original
|
gi1001gi1004do-204apmil-s-19500+450mvp-p25-feb-02gi1002gi1003
|
PDF
|
SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
|
Original
|
represent9-14smd transistors w04 sot-23transistor sot-23 w04sb050 transistor+7in4728amosfet smd w04sn30sc4smd diode code gs1mw01 smd mosfetw04 sot 231s355
|
PDF
|
diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
|
Original
|
diode cross referencein5408 equivalentdiotec electronicsin5408 diode+61n4008pbl302rgp20 17 diode rectifier1n4000 1n4004 1n4002rp602pbp205
|
PDF
|
BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
|
Original
|
5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15abyd74gfur460diode tfk18db6adiode cross referencefagor sm6t33cabzy97ctfk 2401smzg06gpd4sb80z
|
PDF
|
|
|
MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
|
Original
|
mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
|
PDF
|
1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
|
PDF
|
OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
|
Original
|
mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
|
PDF
|
Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
|
Original
|
mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
|
PDF
|
byv260
Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75
|
OCR Scan
|
5ka43a5ke440ca1n3611gpthru1n3614gp+141n3957gp1n40011n40071n4001gp1n4007gp1n4245byv260w10gmbrb1060sblb2030ctsblb2040ctug2d1n8478kbu8m 514
|
PDF
|
5SBA20
Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.
|
OCR Scan
|
5ka43a5ke440ca1n7461n759+161n9571n979ztk33cz4ke100zgl41zgl41-200a5sba20zener b29b2950brf20100cbzy97c11brf20100ctbc337b2060ctbrf1060general semiconductor 1n4249
|
PDF
|
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
|
Original
|
5ce120c5ke120ca5ce120ca5ce12a+145ke12a5ce12c5ke12ca5ce12cacat7105camp1410esg547e2g547h2g547f2p5504edg equivalentg547i1sp8k10sp8k10sfd5tbld1117al
|
PDF
|
MUR120 SMD
Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
Contextual Info: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム
|
Original
|
ul94v-0ito-220abo-220mur120 smd+9diode dgp30vh500sma uf4007smd diode uf4007b330laugf10fctss2ph10ugf5uf5408 smd diode
|
PDF
|
shindengen mr5060
Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A
|
Original
|
5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15ashindengen mr5060tfk 601tfk 60218db6a18db8a18db2aphilips bzv85c-22 data sheetbzx85c motorolabyd74gur1m
|
PDF
|
MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
|
OCR Scan
|
1n58171n56181n58181n5819+121n58201n5821mda2501pbl302g1756g1756 diodemda2502mda970a6mda3510mda2500mda3502 bridge rectifiermda970a1
|
PDF
|