MBR2 Search Results

mbr2506

Abstract: MBR25060V
Contextual Info: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

mbr20100ct liteon

Contextual Info: LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60A Forward Current 30A ITO-220AB MBRF25xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

mbr10120

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

2550CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR2045CTW

Contextual Info: LITE-ON SEMICONDUCTOR MBR2045CTW REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR MBR20150CT REVERSE VOLTAGE - 150 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR MBR20H100CT REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

MBR20100CE

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary MBR20200C DIODE SCHOTTKY BARRIER RECTIFIERS „ DESCRIPTION The UTC MBR20200C is a Schottky Barrier Rectifier with high efficiency, low power dissipation and high current capacity. It can be applied in low voltage, high frequency inverters, polarity protection

Contextual Info: MBR2035PT thru MBR20200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

QW-R601-030

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR20150C Preliminary DIODE SCHOTTKY BARRIER RECTIFIER „ DESCRIPTION The UTC MBR20150C is a Schottky Barrier Rectifier with high junction temperature capacity. „ FEATURES * Good trade off between leakage current and forward voltage drop

MBRF20H150CT

Abstract: JESD22-B102 J-STD-002 MBR20H150CT
Contextual Info: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: DIGITRON SEMICONDUCTORS MBR2535CTL 25A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR2535CTL Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 35 30 30 V Average rectified forward current Rated VR IF(AV)

Contextual Info: MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection OVP

mbr20200cf

Contextual Info: MBR20100CFH THRU MBR20200CFH SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 100 to 200 Volts Forward Current - 20 Amperes ITO-220AB 0.106 2.7 0.098(2.5) 0.193(4.9) 0.177(4.5) 0.413(10.5) 0.374(9.5) 0.108(2.75) 0.104(2.65) * Halogen-free type 0.252(6.4) 0.228(5.8)

2045CTP

Contextual Info: MBR2045CTP NEW PRODUCT 20A SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • Low Forward Voltage Drop Soft, Fast Switching Capability Schottky Barrier Chip ITO-220S Heat Sink Tab Electrically Isolated from Cathode UL Approval in Accordance with UL 1557, Reference No.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • MBR20120CT









20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop

b20100

Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
Contextual Info: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection

Contextual Info: Bulletin PD-20838 rev. B 01/07 MBRB20.CTG MBR20.CTG-1 SCHOTTKY RECTIFIER 20 Amp IF AV = 20 Amp VR = 80/100V Description/ Features Major Ratings and Characteristics Characteristics This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

mbr20150pt

Abstract: IR V 2238
Contextual Info: MOSPEC MBR20150PT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

MBR2030C

Abstract: MBR20 MBR2050C-60C
Contextual Info: MOSPEC MBR2030C Thru MBR2060C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2