FEP6DT Search Results

FEP6BT

Abstract: FEP6CT FEP6DT
Contextual Info: FEP6AT thru FEP6DT Dual Ultrafast Plastic Rectifier Reverse Voltage 50 to 200 V Forward Current 6.0 A TO-220AB 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.055 (1.39) 0.045 (1.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62)

FEP6DT

Contextual Info: FEP6DT, FEPF6DT, FEPB6DT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

FEP68T

Abstract: FEP6DT
Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -6 .0 Amperes TO-220AB FEATURES ♦ Plastic package has Underwriters Laboratory Ftammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap

fep6dt

Abstract: FEP6CT
Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes TO-22QAB FEATURES ♦ Plastic package has carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap

FEP6BT

Abstract: FEP6DT
Contextual Info: FEP6DT, FEPF6DT, FEPB6DT Series Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AB (FEP6AT Series) 0.110 (2.80)

Contextual Info: FEP6ATTHRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6 . 0 Amperes TO-22QAB FEATURES 0. 18 5 4. 70 0. 17 5 (4.44) 0.055 ( 1.39) 0.0 4 5 ( 1. 14) 0. 14 5 (3.68) 0. 135 (3. 43) 0.560 ( 14.22 ) 0.530 ( 13.46)

FEP6DT

Contextual Info: FEP6DT, FEPF6DT, FEPB6DT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

FEP6CT

Abstract: FEP6DT
Contextual Info: FEP6DT, FEPF6DT, FEPB6DT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

FEP6DT

Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage - 50 to 200 Volts Current - 6.0 Amperes FEATURES ♦ Dual rectifier construction, positive center-tap ♦ Plastic package has carries Underwriters Labora­ tory Flammability Classifica­

Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes TO-220AB FEATURES 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.055 (1.39) DIA. 0.148 (3.74) 0.045 (1.14)

FEPB6DT

Abstract: FEP6DT
Contextual Info: FEP6DT, FEPF6DT, FEPB6DT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

fep6dt

Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes TO-220AB FEATURES 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14)

Contextual Info: FEP6AT thru FEP6DT Dual Ultrafast Plastic Rectifier Reverse Voltage 50 to 200 V Forward Current 6.0 A TO-220AB 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.055 (1.39) 0.045 (1.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62)

Contextual Info: FEP6AT THRU FEP6DT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes TO-220AB FEATURES 0.185 4.70 0.175 (4.44) 0.154 (3.91) 0.415 (10.54) MAX. 0.055 (1.27) DIA. 0.148 (3.74) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62)

399P

Abstract: 5KA43A SS12 1N5817 AJ170A 5KE440CA SBL1640CT-2 l4030
Contextual Info: NUMERICAL INDEX . 451 BA157GP thru B A 1 59 G P .327 FE6A thru F E 6 D .123 1 5KE6.8 thru 1 5KE440CA .455 BY228 . 181 FEP6AT thru FEP6DT . 125

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: FEP6xT, FEPF6xT, FEPB6xT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB • Power pack • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50

byv260

Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75