SOT89 Search Results

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

FCX558TA

Abstract: FCX458
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

53Z Zetex

Abstract: 1a SOT89 IC35
Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

FCX718TA

Abstract: FCX718
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;

EPA240D-SOT89

Abstract: EPA240D EPA240
Contextual Info: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features    '5$,1 6285&      (Top View All Dimensions In Mils Applications • • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

SOT539A

Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Contextual Info: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power

PBHV9040T

Abstract: piezo actuator driver PBHV9040Z PBHV8115T PBHV8540T PBHV8540Z PBHV9115T PMBTA44 SC-73 PBHV8115X
Contextual Info: NXP BISS high voltage transistors in SOT23, SOT89 SC-62 and SOT223 (SC-73) Boost performance with BISS HV technology Helping you keep ahead of increasing demands on system performance, our latest series of BISS (Breakthrough In Small-Signal) high voltage transistors

PBSS302NX

Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Contextual Info: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these

EFA480C-SOT89

Contextual Info: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

TK10485M

Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: SOT89 SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

diode SOT89

Abstract: sot89 SOT89 Package 425M
Contextual Info: PACKAGE DIMENSIONS SOT89 3Pin 4.5±0.3 1.5±0.15 0.4±0.1 1 2 3 0.42±0.1 4.25M AX 0.8M IN 2.5±0.3 0.45 1.6 0.42±0.1 +0.15 0.4 -0.05 0.47±0.1 1.5 1.5 UNIT : mm Ver.2003-08-29

40530 transistor

Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

Contextual Info: HT75xx-2 100mA Low Power LDO Features • Low power consumption · High output current : 100mA · Low voltage drop · Output voltage accuracy: tolerance ±1% · Low temperature coefficient · TO92, SOT89 and SOT23-5 packages · High input voltage up to 24V

Marking BA SOT89

Abstract: BCX5616TA BCX56TA bcx56-16t bcx54ta
Contextual Info: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

HT7550-1

Contextual Info: HT75xx-1 100mA Low Power LDO Features • Low power consumption · High output current : 100mA · Low voltage drop · Output voltage accuracy: tolerance ±3% · Low temperature coefficient · TO92, SOT89 and SOT23-5 package · High input voltage up to 24V

Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

77505

Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710
Contextual Info: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount

AP1116

Abstract: AP1116-ADJ
Contextual Info: AP1116 0.5A Low Dropout Positive Adjustable or FixedMode Regulator Preliminary „ Features „ General Description 1.3V maximum dropout at full load current • Fast transient response • Output current limiting • Built-in thermal shutdown • Packages: SOT89

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

transistor marking 6A

Abstract: ZXTN2010Z ZXTN2010ZTA
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

MARKING 851

Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A

TSSOP16

Abstract: TSSOP16 datasheet sot223 transistor SOT23 sot89 To92 transistor TSSOP-16 SOP8 Package SSOT24
Contextual Info: Package Power Dissipation Power Dissipation: Pd（mW） Package Power Dissipation vs. Ambient Temperature Ambient Temperature: Ta（℃） USP6B/C SOT23/25/26/26W, SSOT24, MSOP8A/10 SOP8, TO92, SOT223 TSSOP16 SOT89/89-5 SOT23/25/26 When mounted on PCB TSSOP16 (When mounted on PCB)