100IP Search Results

IL 741

Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

k426

Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Contextual Info: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode

a1746

Abstract: LD 25 VW BUK795-60A
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711ÜSHti □ O l44753 7R2 ■ P H I N Philips Components Data sheet status Preliminary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.

TTPC

Abstract: BUK474-500B rm3 transistor BUK474
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies

rm3 transistor

Abstract: BUK478
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK451-60A

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L SbE D I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

philips ET-E 60

Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

NDS 40-20

Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK545-50A

Abstract: 1E05 BUK545 BUK545-50B
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK437-600B

Abstract: ATIC BUK437-600A
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK457-500A

Abstract: BUK457-500B T0220AB Transistor bss
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^{=53=131 D Ü E a S S S S ■ PowerMOS transistor BUK457-500A BUK457-500B T ~ - 2 ? - i3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK455

Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

MN1 transistor

Abstract: BUK436-200B LTO 100 F BUK436-200A
Contextual Info: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

transistor bu

Abstract: K444
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

KY transistor

Abstract: transistor t 04 27
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK445-400B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

TRansistor L 701

Abstract: vmk 5 pin BUK995-60A
Contextual Info: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic

TRANSISTOR 1FU

Abstract: BUK444 BUK444-200A BUK444-200B
Contextual Info: PHILIPS INTERNATIONAL bSE 3> • 7110fl2b 0Db3Rtil S3T ■ PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

tic 120

Abstract: tic120 transistor t5c BUK993-60A BUK993 transistor tic 698
Contextual Info: Philips Components Data sheet status Preliminary specification date ol issue March 1991 BUK993-60A PowerMOS transistor Logic Level SensorfET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a 5 pin plastic