HBS3T31 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE 2SE D B PBYR1035 PBYR1040 PBYR1045 hbS3T31 0023137 4 B T-6Z-I7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in

N 407 Diode

Abstract: Philips MBB BAV74
Contextual Info: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.

DD 127 D

Abstract: dd 127 dd 127 d D 304 x LTD202R-12 LTD221R-11 LTD222R-11 LTD225R-11 DD 127
Contextual Info: N AMER P H I L I P S / D I S C R E T E hbS3T31 GQltiHS7 7 • 2SE D Optoelectronic Devices LIQUID CRYSTAL DISPLAYS, STANDARD In order of character size (cont.) DISPLAY FORMAT s iff TYPE LTD202R-12 GLASS SIZE (mm) 27.9 X 30.4 CHARACTER SIZE (mm) 12.7 Z VIEWING

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

1N3913

Abstract: 1N3909 1N3910 1N3911 1N3912
Contextual Info: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.

BUK445-600B

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUZ83A

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE E5E D • hbS3T31 QQlbEHE 5 ■ Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. ’ TYPE PACKAGE -•.- RATINGS hFE •c V<iE(sat) " m ax « atlc% / ’ mA/mA ' ’ .*r. typmh2 PINOUT SEE SECTION Vt VCEO V V cB C ¥ mA 20 50

BFR96 philips

Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

Contextual Info: • Philips Semiconductors ^ 5 3 ^ 3 1 0024101 IAPX Product specification N AMER PHILIPS/DISCRETE b7E D N-channel field-effect transistor 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections

Contextual Info: I N AMER PHILIPS/DISCRETE ObE D bbS3TBl QQlSbl11] T • "BCV71 BCV72 JV ~X-'XC\~\£\ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

Contextual Info: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.

transistor IC BT 134

Contextual Info: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BYV26

Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
Contextual Info: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA

BSS38

Contextual Info: N AUER P H I L I P S / D I S C R E T E b'ìE D □□27Û53 fl44 BSS38 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is prim arily intended fo r general purpose switching and as driver fo r numerical indicator tubes.

BLV37

Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Contextual Info: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb53T31 □01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.

Contextual Info: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

Contextual Info: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

Contextual Info: I I N A flE R P H IL IP S /D IS C R E T E 5SE D ^ 5 3 ^ 3 1 M A IN T E N A N C E T Y P E Q D 2577S 4 • BYW92 SERIES A 7 = 0 3 -1 *7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

Contextual Info: 11 1^53=131 001=5713 0 • 25E D N AMER PHILIPS/DISCRETE BDT41;A BDT41B;C J T -3 3 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The TIP41 series is an equivalent type. P-N-P complements are BDT42 series.

BUX46

Abstract: BUX46A N13e
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » bbS3' i o a n o M s 7 i BUX46BUX46A T-33-J3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.