BUK451 Search Results

BUK451-60A

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L SbE D I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BU 508 transistor

Abstract: 10aio BUK451-60A BUK451-60B T0220AB transistor t4B K4516
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH IL IP S I N T E R N A T I O N A L SLE » I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

K 3911

Abstract: BUK451-60A BUK451-60B T0220AB
Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK451-100A

Abstract: K451 BUK451-100B T0220AB transistor 513
Contextual Info: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Power Semiconductor Applications Philips Semiconductors

Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
Contextual Info: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition

Diode and Transistor 1980

Abstract: TRANSISTOR a 1980 BUK451-100A BUK451-100B
Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,