BUK441 Search Results

BUK441

Abstract: BUK441-60A BUK441-60B 3909
Contextual Info: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

Contextual Info: N AMER PHILIPS/DISCRETE bRE D bbS3R3i 0030503 Rob Product Specification Philips Sem iconductors BUK441-100A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK441

Abstract: BUK441-60A BUK441-60B
Contextual Info: -7 ^ 3 9 -O Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of Issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: t Philips Components Data sheet status Preliminary specification date of issue March 1991 - 3 9 - J o BUK471-100A/B PowerMOS transistor Replaces BUK441-100A/B SbE » PHILIPS I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 SbE ]> • 7 1 1 0 fl5 b O O M 4 S 7 T 137 « P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

GD44S

Abstract: BUK471 BUK471-60A BUK471-60B
Contextual Info: PH IL IP S I N T E R N A T I O N A L Data sheet status Preliminary specification date of issue March 1991 SbE ] • 7 1 1 0 fl2 b DGMMS?«! 137 M P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channei enhancement mode

IL 741

Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

BUK441

Abstract: BUK441-100A BUK441-100B
Contextual Info: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

Mosfet catalogue

Abstract: mosfet 200A buk444 200B 220AB
Contextual Info: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK441

Abstract: BUK441-100A BUK441-100B
Contextual Info: N AMER P H I L I P S / D I S C R E T E b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Power Semiconductor Applications Philips Semiconductors

Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
Contextual Info: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition

d 434 mosfet

Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
Contextual Info: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL

power mosfet catalogue

Abstract: mosfet catalogue BUK551-100A BUK445-100A 100a mosfet SOT404
Contextual Info: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs POWER SEMICONDUCTORS POWERMOS TRANSISTORS INCLUDING TOPFETS V DS R DS on b (V) (O) (A) 'd (A) PD (W) 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 0.1 0.1 0.1

BUK417-500B

Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
Contextual Info: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263