BUK442 Search Results

Contextual Info: N AflER P H IL IP S /D IS CRETE 2SE D • bbS3T31 0Q2D330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B r-39-o <? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK442-50A

Abstract: BUK442 BUK442-50B
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK442

Abstract: BUK442-60A BUK442-60B
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • btSBTBl 002033S T ■ PowerMOS transistor BUK442-60A BUK442-60B T~ 37-09 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bRE D bb53R31 0D30S10 273 « A P X Product Specification Philips Semiconductors BUK442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUK442-100

Abstract: BUK472 BUK472-100A BUK472-100B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

Contextual Info: bL53131 005033S T 2SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r B U K 4 4 2-60 A B U K 442-60B T - G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

NDS 40-20

Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK442

Abstract: BUK442-100 BUK442-100A BUK442-100B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP

TRANSISTOR BC 208

Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
Contextual Info: PHILIPS INTERNATIONAL b5E D • 711DflEb aDb3T4b 223 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

BUK445-100A

Abstract: BUK445-600B
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP

Contextual Info: 7 ^ 3 9 - 0 ? Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE international GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK442-60

Abstract: BUK472 BUK472-60A BUK472-60B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK442-100A

Abstract: BUK442-100B
Contextual Info: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.

K442

Abstract: BUK442-100A BUK442-100B
Contextual Info: N AMER PHI LIPS/DISCRETE t.TE D bbS3T31 GD3DS10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Power Semiconductor Applications Philips Semiconductors

Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
Contextual Info: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL

BUK442

Abstract: BUK442-60A BUK442-60B 1e47
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle