BL53131 Search Results

Contextual Info: bL53131 005033S T 2SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r B U K 4 4 2-60 A B U K 442-60B T - G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

philips cnx82a

Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Contextual Info: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and