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gis 110 kv

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

1101 transistor

Abstract: buk453
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench' technology the device features very low on-state

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL QUICK REFEREN CE DATA • ’T re n c h ’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

BUK427-500B

Contextual Info: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

transistor bo 244

Abstract: BUK454-450B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53=131 00204b5 PowerMOS transistor 1 ■ BUK454-450B r -3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 OOaablQ fl ■ PowerMOS transistor Fast Recovery Diode FET BUK655-450B T-31-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK437-400A

Abstract: BUK437-400B
Contextual Info: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

GS 069 LF

Abstract: BUK437-400A BUK437-400B QDS031D 7648a
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D bbSBTBl QDa031Q s BUK437-400A BUK437-400B PowerMOS transistor T-37-/5T G EN ER A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK457-500A

Abstract: BUK457-500B
Contextual Info: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor D 716

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking

EL 817 c337

Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Contextual Info: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification