BUK437 Search Results

BUK437-450B

Abstract: T-39-15
Contextual Info: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK437-600B

Abstract: ATIC BUK437-600A
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK437-500A

Abstract: BUK437-500B buk437 S1216
Contextual Info: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK437-600B

Abstract: BUK437-600A BUK437 TNT sot
Contextual Info: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bbsaiai 0020315 4 PowerMOS transistor BUK437-450B T " 3 '7 - I5 ' QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK437-400A

Abstract: buk437-400b 2428D dc smps BUK437
Contextual Info: BUK437-400A BUK437-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eftect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK437-400A

Abstract: BUK437-400B
Contextual Info: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK437-400B

Abstract: DIODE JS.4 GS 069 LF
Contextual Info: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: blE D N AUER PHILIPS/DISCRETE bbSa'IBI 0030465 E'IS « A P X Product Specification Philips Semiconductors BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

GS 069 LF

Abstract: BUK437-400A BUK437-400B QDS031D 7648a
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D bbSBTBl QDa031Q s BUK437-400A BUK437-400B PowerMOS transistor T-37-/5T G EN ER A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

NDS 40-20

Abstract: BUK437-500B DIODE BB2
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK437-500B

Abstract: J812 DD304 HIA TRANSISTOR
Contextual Info: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

GS 069 LF

Abstract: BUK437-400B DIODE JS.4 P02S
Contextual Info: N ANER PH ILI PS/DISCRETE bbSBSBl 0G304Ô0 7Gb • APX LTE » Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

FULL WAVE mosfet RECTIFIER CIRCUITS

Abstract: snubber CIRCUITS mosfet 500a reversed diode Amp. mosfet 1000 watt byc10-600 equivalent ultraFast Recovery Bridge Rectifier high power fast recovery diodes 5 ns all mosfet equivalent book power recovery diode FAST RECOVERY DIODE
Contextual Info: Philips Semiconductors Application Note Ultrafast Epitaxial Diodes for Power Factor Correction Choosing the correct diode is the most cost effective way of reducing MOSFET switching losses in active power factor correction circuits. Philips Semiconductors has

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

BUK437-500B

Contextual Info: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

GS 069 LF

Abstract: BUK437-600B IP Semiconductors A/blf 187
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,