D030M Search Results

BUK437-400B

Abstract: DIODE JS.4 GS 069 LF
Contextual Info: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Or, Call Customer Service al 1-80Ù-548-6132 USA Only B U R R - BROW Nt INA106 n = n ^ i I m FEATURES APPLICATIONS • ACCURATE GAIN: ±0.025% max • G = 10 DIFFERENTIAL AMPLIFIER • HIGH COMMON-MODE REJECTION: 86dB min • G = +10 AMPLIFIER • NONLINEARITY: 0.001% max

Contextual Info: N APIER PHILIPS/DISCRETE bR E D bbS3R31 QD3042R 4bR • APX Product Specification Philips Semiconductors BUK106-50US BUK106-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

Contextual Info: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

sw 2604 ic

Abstract: Sw 2604 Sw 2604 circuit QPA2604AU
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N0 E OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER Q . 2 FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • PROFESSIONAL AUDIO EQUIPMENT • LOW NOISE: 10nV/\'Hz