BBSBT31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BYV118-35

Abstract: M3174 BYV118 M3178
Contextual Info: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

lte2

Abstract: 0261 230 154 LTE21009R LTE21015R
Contextual Info: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -

1300 laser diode rise time

Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
Contextual Info: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed

T3D 54 DIODE

Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Contextual Info: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

s3331

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

LJE42002T

Abstract: npn 41A
Contextual Info: N AMER PH ILIPS/ DIS CRETE OLE D • bbSBT31 0014131 7 ■ 11 M AINTENANCE TYPE LJE42002T _ J v MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,

Contextual Info: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM ­ J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

V103 transistor

Abstract: BUZ41A transistor BUZ41 T0220AB V103
Contextual Info: PowerMOS transistor_ N AMER P H I L I P S / D I S C R E T E OLE D BUZ41A • bbSB'm _ 001M 4^3 1 ■ T " 2 * ì - |/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in

CNX71A

Abstract: CNX72A UBB033
Contextual Info: P rodu ct specification P h ilip s S e m ico n d u cto rs High-voltage optocouplers CNX71A/CNX72A FE A T U R E S • High current transfer ratio and a low saturation voltage, making the devices suitable for use with T TL integrated circuits • High degree of A C and D C

BB5Z

Abstract: BSP30 BSP31 BSP32 BSP33 VC80
Contextual Info: • bbS3T31 a0254b0 57b HIAPX BSP30 TO 33 b?E J> N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in m iniature plastic envelopes intended fo r application in thick and th in-film circuits. T h e y are intended fo r use in telephony and general industrial applications.

Contextual Info: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

FX1115

Contextual Info: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.

Contextual Info: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A

c3v9

Abstract: CECC50 005 BZV85 philips 683 series c6v2 C7V5 BZ/88/C4V7
Contextual Info: N AMER P H IL IP S /D IS C R E T E SSE D • ^53^31 G G IL T SI Â Q ■ BZV85 SE R IE S T - / M VOLTAGE REGULATOR DIO DES 3 ^ Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages

BGY94C

Abstract: BGY94A BGY94B A08 RF Amplifier
Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPM ENT DATA1• GbE D ■ btiS3T31 Ü013514 ■ This data sheet contain! advance inform ation and ipecHrcatlon* are subject to change w ithout notice, BGV94A BGY94B BGY94C _ 86D 01056 D T -7*1'à<ì-C/ V . -N O R T H / A M P E R E X / D I S CRETE DbE D

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ^ l □□S7flDT 737 I APX BFY55 V. SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as fo r output stages

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

BDT42

Abstract: BDT41 BDT42B IEC134 TIP42 TIP42 equivalent T3321
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bbS3T31 0 0 n 7 2 T ■ BDT42;A BDT42B;C T-33-ÄJ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type, P-N-P complements are

RXB12350Y

Abstract: ATC capacitor
Contextual Info: _LL N AMER P H I L I P S / D I S C R E T E ObE » • 1^53^31 0015SD7 J *] ■ RXB12350Y T-'ìl-!S' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.

k 246 transistor fet

Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.