LAE6000Q Search Results

MARKING CODE R7

Abstract: IEC-134 transistor t4B IEC134 MARKING CODE R7 RF TRANSISTOR common emitter amplifier TRANSISTOR BL 100 LAE6000Q
Contextual Info: 7 LAE6000Q M A IN T E N A N C E T Y P E PHILIPS INTERNATIONAL 5bE J> m 7110fl2b D 04blô0 GOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN tran sisto r fo r co m m o n -e m itte r class-A low-noise a m p lifie rs up to 4 G Hz. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m te m perature p ro file ,

MARKING CODE R7

Abstract: IEC134 LAE6000Q SOT-100
Contextual Info: 1I N AMER P H I L I P S / D I S C R E T E JDbE D • ^ 5 3^31 5 ■ LAE6000Q r-3 |-i5 r LOW-NOISÉ MICROWAVE TRANSISTOR N-P-N transistor fo r com m on-em itter class-A low-noise amplifiers up to 4 G H z. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

IEC-134

Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Contextual Info: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40