BFY55
Abstract: discrete 4-20ma Silicon Epitaxial Planar Transistor philips
Contextual Info: I I N AUER P H I L I P S / D I S C R E T E bTE b b S B ^ a i j D QDETflDT 737 I IAPX BFY55 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tran sisto r in T O -39 m etal case w ith th e c o lle c to r connected to th e case. I t is p rim a rily intended fo r use in high freq u e n cy and ve ry high fre q u e n cy oscillators and a m p lifiers as w e ll as f o r o u tp u t stages
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bfy5553cl31002762qdiscrete 4-20ma+1silicon epitaxial planar transistor philips
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BFY55
Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages
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bfy557110fl5bt-3j-23t-31-23+5711dasb0dm53gbtransistor f 4211f t transistorsilicon epitaxial planar transistor philips
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Contextual Info: BFY55 J V _ SILICON PLANAR EPITAXIAL TRANSISTOR N P-N transistor in TO-39 metal package, with collector connected to the case. It is prim arily intended for use in high frequency and very high frequency oscillators and amplifiers as well as fo r output stages
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Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ^ l □□S7flDT 737 I APX BFY55 V. SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as fo r output stages
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bfy55bbs3r310027fllfl00276e0 |
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BFY41
Abstract: BFY33 BFX68 BFY46 bsv82 BFY67 bfx74a BFY64 BFX29 BFX30
Contextual Info: Medium Power Amplifiers and Switches P O L A R IT Y BFX2 9 B FX3 0 BFX3 5 BFX3 8 BFX3 9 P P P P P TO-39 TO-39 TO-18 TO-39 TO-39 600 600 360 800 800 0.6 0.6 _ 1 1 60 65 40 55 55 50 50 80 85 40 BFX4 0 BFX41 BFX6 8 BFX6 9 BFX 6 9 A P P N N N TO-39 TO-39 TO-39
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bfx29bfx30bfx35bfx38+13bfx39bfx40bfx41bfx68bfx69bfx69abfy41bfy33bfy46bsv82bfy67bfx74abfy64
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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BAV90
Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17
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0d12deba243bc146/02bc849b/c+16bc338bc818ba314bas17bcf32/33bcx20bav90bd139 smdpmbt2369abf981bf966 smd2n2907 smdbf9802n4858 smdbfg65bc547 smd
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP
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BSW65
Abstract: BSV12 BSW66 BSS46 BFX98 BFY64 BFX86 BFX87 BFX88 BFY50
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP
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bfx86bfx87bfx88bsx64+11bsx95bsx96bsy34bsy51bsw65bsv12bsw66bss46bfx98bfy64bfy50
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BSV12
Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
Contextual Info: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP
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2n656a2n657a2n696bsv12+9bsw65se7001bc461 2n53222n3444mj4212n43582n697a2n19902n3252
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197xs310nw1p 59 transistorw1p 48 transistor+8transistor w1p 83icm ap 1703transistor smd marked rnwtransistor bd139 ph 71w1p 66 transistortransistor w1p 91pnp transistor smd ba rnw1p npn
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2n2222 h 331 transistors
Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300
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bc107bc108bc109bc140+15bc141bc337bc337abc338bc368bc3752n2222 h 331 transistors2n2222a 3312n2222 -331 transistorspnp 2n3906 3312n2222 - 331jf4942n2222 2n5401 2n55512n2222 331 transistorspnp 2n4403 331
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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BF689
Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200
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bf200o-206af/to-72bf183bf206+11bf208bf6892n5651bf2722n5652bf251bfy82bfy70bf316bf479bfx36
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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BFY40
Abstract: BFT40 BFT41 BFT80 BFT81 BFW24 BFW25 BFW26 BFW29 BFW31
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY HFE MAXIMUM RATINGS CASE VCE sat fr Cob COMPLE IC VCEO IC VCE max min max MENTARY (mW) (A) (V) min max (mA) (V) (V) (A) (MHz) (PF) TYPE 250 300 120 300 120 100 100 150 150 150 10 10 1 1 1 1.0 1.0
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