TBS3T31 Search Results

BUZ53A

Contextual Info: PowerMOS transistor BUZ53A ObE N AMER P H I L I P S / D I S C R E T E D • tbS3T31 OD 1 4 7 3 . D 1 2 T - 3-H July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

buz45

Contextual Info: PowerMOS transistor_BUZ45 N AMER PHILIPS/DISCRETE QbE J> M tbS3T31 0014b47 T • _ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

Dow Corning 340

Abstract: BYX32 BYX32-600 BYX32-1600 BYX32-600R Dow Corning Dow Corning si 340 600R 800R BYX32-1600R
Contextual Info: N AMER PH IL IPS /DIS CRET E tbS3T31 OOlOOflb T TOD D BVX32 SERIES MAINTENANCE TYPES SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes with ceramic insulation, intended for power rectifier application. The-series consists of the following types:

BF660

Abstract: marking IAY
Contextual Info: •I tbS3T31 0D24b71 22b H A P X N AMER PHILIPS/DISCRETE BF660 b7E » SILICO N PLANAR T R A N SIST O R P-N-P transistor, in a m icrom iniature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction w ith M O S - F E T s in thick and thin-film circuits.

Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor

56295A

Abstract: 1N3889 1N3890 1N3891 1N3892 1N3893 IEC134 C738
Contextual Info: N AMER PHILIPS/DISCRETE tbS3T31 0G11715 fl □ LE D 1N3889 to 1N3893 T ~ 0 3 - 17 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

J308

Abstract: MCD217 transistor 309 J309 J310 UBB114 ti j309
Contextual Info: tbS3T31 0D2M012 2 T2 H A P X Prelim inary specification Philips Sem iconductors N-channel silicon field-effect transistors N AUER J308/309/310 PHILIPS/DISCRETE b?E ]> PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

Contextual Info: N AUER PHILIPS/DISCRETE QbE D tbS3T31 0015015 0 • DEVELOPMENT DATA LVE21050R This data sheet contains advance information and specifications are subject to change without notice. J V T -3 3 -0 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor for use in common-emitter class-A linear power amplifier up to 4,2 GHz.

Contextual Info: N AMER PHILIPS/DISCRETE BSE D • tbS3T31 001733^ S ■ I BFQ54 _ _A T-33-17 PNP 1 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SO T122 package, primarily intended for M A T V and microwave amplifiers, such as radar systems, spectrum analysers etc.

Contextual Info: JLL bbS3T31 D0114D7 fl OLE D N AUER PH ILI PS/ DIS CRET E BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

BFQ53

Abstract: Philips MBB BFQ52
Contextual Info: bbâ3^31 Philips Semiconductors OOBISfifi Û7S U APX Product specification NPN 5 GHz wideband transistor ^ BFQ53 N D ESCRIPTION AMER PHILIPS/DISCRETE h'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the

BFQ161

Abstract: low capacitance NPN transistor 6055j
Contextual Info: P hilips Semiconducto m ttiS 3 T 3 1 TlO B lbflH ODO • Product specification APX NPN 1 GHz video transistor ^ BFQ161 N AMER P H I L I P S / D I S C R E T E b'îE » PINNING FEATURES DESCRIPTION PIN • Low output capacitance • High gain bandwidth product

Contextual Info: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: N AMER PHILIPS/DISCRETE b b S B ^ l DDEbHTfi b^E » A IAPX BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

cr 406 transistor

Abstract: BUZ54
Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BLX93A

Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Contextual Info: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe

BC856B

Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Contextual Info: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V

1PS193

Abstract: ML834 SC59 marking f3t 14E marking code SMD
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE » m ^53=131 0027101 Philips Semiconductors D?T H i A P X Preliminary specification 1 P S 193 High sp eed dio de FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application.

Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 □02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile

BUZ356

Contextual Info: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

philips 22c

Abstract: but22 BUT22B BUT22C IEC134
Contextual Info: ESE I> N AMER PHILIPS/DISCRETE • ^ 5 3 ^ 3 1 0018051 7 ■ ” BUT22B BUT22C T - 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use in converters, inverters, switching regulators, motor controHystems, etc.

dlp 445 nm

Abstract: BYV74F M1982
Contextual Info: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE SSE D • bbS3T31 0022fc.m 5 ■ ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES