56295A Search Results

56360A

Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Contextual Info: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c

Contextual Info: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

PHILIPS BYX50-200

Contextual Info: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:

Contextual Info: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

N82S123F

Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Contextual Info: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

Contextual Info: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

ALP-51

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

m2131

Abstract: BYV31-500 BYV31-500U S 0319
Contextual Info: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd

m2131

Abstract: BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31
Contextual Info: SSE D N AMER PHILIPS/DISCRETE • 1^53=131 QG2554S 1 ■ BVV31 SERIES T 0 3 -/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

m3165

Contextual Info: BYV121 SERIES _ / v_ SCHO TTK Y-B A R RIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , low capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T he y are intended f o r use in

pby 345

Abstract: BYW93 pbyr BYX56 56360A BYW31
Contextual Info: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series

M3163

Abstract: M3162
Contextual Info: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,

Contextual Info: BYV31 SERIES SbE D PHILIPS INTERNATIONAL • 7110fl2b D D m B S D bflfl ■ P H I N r - o 3 ~ i ci ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

byv31

Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Contextual Info: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

Contextual Info: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for

Contextual Info: J _L N AMER PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 1 7 m 2 • 1N 3879l o ~ 1N 3883 ^ JVT-Q3-I7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO—4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

BYX50-200

Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Contextual Info: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

m3171

Abstract: BYV120-35M BVV120 BYV120 BYV120-35 M3170
Contextual Info: ~ N AMER PH IL IP S /D ISC RE TE SSE [ I bbS3T31 D QGSSbô3 T • BYV120 SERIES T -Ô Z -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in

1N3893

Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Contextual Info: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

Contextual Info: BYV120 SERIES y V- SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , lo w capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T h e y are intended fo r use in

56360A

Abstract: 56359D
Contextual Info: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.

Contextual Info: ' N AnER P H IL IP S /D IS C R E T E 25E ' [I ^ 5 3 ^ 3 1 D 0022^63 T • BYV120 SERIES J T -0 Z -I7 v. SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended for use in