TBS3131 Search Results

Contextual Info: i I Jt QQ1737C( U U il tbS3131‘ fl • - 2SE D N AMER PHILIPS/DISCRETE Jl 1N957B to 1N973B T -II-0 ? 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended fo r use as low power voltage stabilizers or voltage references. The series consists o f 17 types w ith nominal working voltages ranging from 6.8 to 33 V.

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • tbS3131 Q01b23b T ■ V -W -O l Surface Mount Devices GENERAL PURPOSE TRANSISTORS, NPN hFE V C E s at tf PINOUT m inJm ax. a t I c /V c e m A/V max. a tlc / le ty p SECTION MHZ VI RATINGS TYPE PACKAGE V cEQ V V cBO •c

TRIAC BR100

Abstract: BR100/03 Thyristor mw 134 BR100
Contextual Info: QG271S5 531 HIAPX N AMER PHILIPS/DISCRETE b^E D rnmps aemiconauciors_ _ Krenminary specification Silicon bi-directional trigger device BR100/03 DESCRIPTION Silicon bi-directional trigger device intended for use in triac and thyristor

Contextual Info: DEVELOPMENT DATA BYV133F SERIES This data sheet contains advance information and specifications are subject to change without notice. N AUER PHILIPS/DISCRETE 2SE D • bb53T31 QQ2270T 2 ■ SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes

philips ET-E 60

Contextual Info: E5E T> m bb53*131 OOaaa1^ fi BY229 SERIES N AMER PHILIPS/DISCRETE 7 = 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in

Contextual Info: N AMER PHILIPS/DISCRETE 35E D • bbS3T31 D01flbT3 4 I BUP23B BUP23C T - 3 3 - f S' -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

bf964

Abstract: bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • fc,fa53i31 0012150 h ■ _ „ B BF964; _ A_ _ T-Jt-as" SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r v.h.f. applications in television tuners, especially in r.f. stages and m ixer stages in S-channel

Contextual Info: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.

sot199

Abstract: BDV64F lem HA BDV64AF BDV64BF BDV64CF BDV65F USB012 BDV64 B0V64B
Contextual Info: Philips Com ponents BDV64F/64AF/64BF/64CF PNP Silicon Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching applications.