BY610 Search Results

PICTURE TUBE

Abstract: BY609 BY610
Contextual Info: SbE ]> • 711002b 0G404S1 245 ■ PHIN PHILIPS INTERNATIONAL BY609 BY610 V. SbE T> T - t f Z 'IS ' SILICON E.H.T. AVALANCHE RECTIFIER DIODES * E .H .T . re c tifie r diodes in glass envelopes. F o r use in high-voltage applications such as m u ltip liers,

Contextual Info: N AMER PHILIPS/DISCRETE b b S B ^ l DDEbHTfi b^E » A IAPX BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

BY610

Abstract: PICTURE TUBE BY609 avalanche rectifier sod61 orange
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □□Eb4‘ìfi 4T1 H A P X Jl BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

SOD-61

Abstract: B2T03 24000V sod 82 sod61 TO220V BZD23 A3MA B2W03 SOD61 Package
Contextual Info: 33 Power Devices High Voltage Rectifiers in order of voltage rating (cont.) Type No. BY708 BY718 BY709 BY719 BY609* BY619* BY610* BY620* BY710 BY720 BY611* BY711 BY721 BY722 BY713 BY723 BY714 BY724 Package Outline 1f (AV) VRRM VRWM trr (typ) SOD-61 SOD-61

PICTURE TUBE

Abstract: BY609 BY610 diode Cathode indicated by yellow band
Contextual Info: N AUER PHIL IPS/DISCR ETE b^E » • bbS3T31 DGEbHTfi 4T1 H A P X BY609 BY610 X SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E.H.T. rectifier diodes in glass envelopes. For use in high-voltage applications such as m ultipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable

diode Cathode indicated by yellow band

Abstract: glass diode orange yellow band glass diode yellow band BY610 transformer diode rectifier working eht rectifier SOD-61 PICTURE TUBE BY609
Contextual Info: b3E D • bb53tîE4 00743E0 M3Ö ■ SIC3 NAPC/PHILIPS SEMICOND BY609 BY610 A F O R D E T A IL E D IN F O R M A T IO N S E E T H E L A T E S T IS S U E O F H A N D B O O K SC 01 O R D A T A S H E E T SILICON E.H.T. AVALANCHE RECTIFIER D IO DES E.H .T. rectifier diodes in glass envelopes. F o r use in high-voltage applications such as multipliers,

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BY816

Abstract: BCT500 Din 46234
Contextual Info: Copper Compression Connectors BY Line BRAZED DIN 46234 Non-insulated copper brazed terminals 0,5 - 240 mm2 Description ELECTRO-TIN PLATED • Range of copper sheet, brazed terminals taking wires from 0,5 - 240 mm2 Construction • Electrolytic copper sheet, electro tinned

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40