S1216 Search Results

DS1216B

Contextual Info: DS 1216B DALLAS s e m ic o n d u c to r FEATURES _ D S1216B SmartWatch/RAM 1 6K/64K PIN ASSIGNMENT • ■ IE [ 1 2 I 1 4 I 1 5 I 1 V qc 27 WE CO 3 • Converts standard 2K x 8 and 8K x 8 CM OS static RAMs into nonvolatile m em ory 28 ü o > RST CM • Keeps tra ck of hundredths of seconds, seconds, m in­

ocp sfp

Abstract: SFP LVDS S1216 TRPN03 amcc CDR IBM "lvds" SCP6802-GL OC12 sfp optic with cdr sfp ocp
Contextual Info: PRODUC T BRIEF 6 S121 S1216 SONET/SDH/ATM OC-3/12 with Clock Data Recovery CDR Features Description • CMOS 0.13 micron technology • Complies with Bellcore and ITU-T specifications for jitter tolerance, jitter transfer, and jitter generation • On-chip high-frequency PLL for clock generation and clock recovery

Contextual Info: D S1216D DALLAS SEMICONDUCTOR SmartWatch/RAM 256K/1M FEATURES PIN ASSIGNMENT S1216D • Converts standard 8K x 8, 32K x 8, 128K x 8, and 512K x 8 CMOS static RAMs into nonvolatile memory 1 •■■ 32 V CC • Embedded lithium energy cell maintains watch infor­

Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

62630

Contextual Info: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si8805

Abstract: si88
Contextual Info: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •

SiA447DJ

Contextual Info: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: ST AN DA R» MICROSYSTEMS Tb D Ë J ñSbMLñt. DD0403b 1 | Your Semicustom Design Partner. When your need is ASIC application specific integrated circuit , the right semicustom partner is extremely important. The success of your company's program is dependent upon

qt2025

Abstract: QT2225 QT2225-1 S4886 QT2025-1 S19262 AMCC S4882 S4882 S19258 S19233
Contextual Info: ɈɩɳȹɝĘɈअౠ Product Selector Guide ȹȤɃɁ ɕȡɖɪɃȯ ɕɬĘɞɞɃɑ ɇĘȿȳɠǗȕȀ Ɇɬȳɠಞซॾ PHY ɇɐȤȹ Product Selector Guide ࠖซþ૟ঝþࡼ೧ȹɈɬĘȸǻ ۛ‫ژ‬ǻȽɪɥĘȷɧɳȟળԽ ɍɃɈɯĘȯ ȳɳɐĘȸȧɳȹ ɈɪɗɫɗɬȤ

Contextual Info: SPICE Device Model SQ4937EY www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Circuit integrated 8002

Abstract: S1216 static ram 64K pt dsc sec
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 10494 FEATURES: DESCRIPTION: • 16,384-words x 4-bit organization • Address access time: 8/10 /1 5 ns (max.) • Low power dissipation: 600m W (typ.) • Fully compatible with ECL logic levels

Si8809EDB

Abstract: si8809
Contextual Info: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) () ID (A) 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • • • • • • Qg (Typ.) 6 nC MICRO FOOT

si4554

Abstract: si4554dy
Contextual Info: SPICE Device Model Si4554DY www.vishay.com Vishay Siliconix N- and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S1216

Contextual Info: SPICE Device Model SiS778DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm

Contextual Info: SUD50N06-09L Vishay Siliconix N-Channel 60 V D-S , 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0093 at VGS = 10 V 50 0.0122 at VGS = 4.5 V 50 VDS (V) 60 • 175 °C Junction Temperature • TrenchFET Power MOSFET • Material categorization:

Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •

Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET

Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm

Contextual Info: SPICE Device Model SQ4949EY www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.